Texas Instruments Corporation

Vinu Yamunan

Charles Anthony Odegard

Masood Murtuza

Marvin Wayne Cowens

Phillip R Coffman

Tz-Cheng Chiu

A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Adhesion by plasma conditioning of semiconductor chip

A system () for manufacturing product, in which a first work station () is operable to perform a first manufacturing action on the product parts; this first station has a first entrance () and a first exit). A second work station () is operable to perform a second manufacturing action on the product parts; this second station has a second entrance () and a second exit (). A transport line () between the first exit and the second entrance is operable to move the product parts under computer control. A chamber () encloses a portion of the line and is constructed so that the transport achieves a balanced throughput from the first station to the second station, while the product parts are exposed to computer-controlled environmental conditions () during transport through the chamber. The balanced throughput in the chamber is achieved by waiting lines for the product with computer-controlled monitors () for product parts' positions and times in the chamber.

Manufacturing system and apparatus for balanced product flow with application to low-stress underfilling of flip-chip electronic devices

Adhesion by plasma conditioning of semiconductor chip surfaces

A semiconductor device () having a leadframe with a first plurality of segments () having a narrow end portion () in a first horizontal plane () and a wide end portion () in a second horizontal plane (). The leadframe further includes a second plurality of segments () having a narrow center portion () in the first horizontal plane, at least one wide center portion () in the second horizontal plane, and narrow end portions () in a third horizontal plane (), which is located between the first and second planes.

Growing community of inventors

Dallas, TX, United States of America

Vinu Yamunan