Abb Schweiz Ag

Abb Research Ltd.

Hitachi Energy Switzerland Ag

Abb Power Grids Switzerland Ag

Hitachi Energy Ltd

Vinoth Sundaramoorthy

Iulian Nistor

Renato Minamisawa

Stephan Wirths

Richard Bloch

Gerold Knapp

Enea Bianda

Giovanni Alfieri

Andrei Mihaila

Franz Zurfluh

Alexander Heinemann

A method for forming a semiconductor device includes implanting first ions and second ions into a p-type silicon carbide layer from a first main side to form an implantation layer at the first main side. The implanting is performed by plasma immersion ion implantation in which the p-type silicon carbide layer is immersed in a plasma comprising the first ions and the second ions. The first ions can be ionized aluminum atoms and the second ions are different from the first ions.

Method of making a silicon carbide electronic device

A method for p-type doping of a silicon carbide layer includes first implantation step of implanting aluminum dopants into a preselected region of the silicon carbide layer by ion implantation, an annealing step of annealing the silicon carbide layer after performing the first implantation step, a second implantation step of implanting beryllium dopants into the preselected region by ion implantation before the annealing step. A ratio of the total aluminum dose in the first implantation step to the total beryllium dose in the second implantation step is in a range between 0.1 and 10.

SiC electronic device fabricated by Al/Be co-implantation

It is the object of the invention to provide a power semiconductor rectifier with a low on-state-voltage and high blocking capability. The object is attained by a power semiconductor rectifier comprising: a drift layer having a first conductivity type; and an electrode layer forming a Schottky contact with the drift layer, wherein the drift layer includes a base layer having a peak net doping concentration, below 1&#xb7;10cmand a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1&#xb7;10cmand 1&#xb7;10cmand wherein the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation, layer of at least 1 nm and less than 0.2 &#x3bc;m.

Power semiconductor rectifier with controllable on-state voltage

The present invention relates to a method for determining an actual junction temperature (T) and/or an actual collector current (I) of an IGBT device, wherein the IGBT device has a main emitter (E) and an auxiliary emitter (E), comprising the steps of;

Method and apparatus for determining an actual junction temperature of an IGBT device

A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.

System and method for monitoring in real time the operating state of an IGBT device

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Wettingen, Switzerland

Vinoth Sundaramoorthy