Longitude Flash Memory Solutions Ltd.

Cypress Semiconductor Corporation

Longitude Elash Memory Solutions Ltd

Vineet Argrawal

Iulian Constantin Gradinariu

Gary Peter Moscaluk

Vijay Raghavan

Roger J Bettman

Cristinel Zonte

Samuel Leshner

Systems and methods for driving a non-volatile memory device in a standby operating condition are disclosed. A standby detection circuit detects whether the non-volatile memory system is in a standby condition. In response to determining that the non-volatile memory system is in a standby condition, a bias control circuit provides bias currents to drivers of the non-volatile memory system in a standby mode.

Low standby power with fast turn on method for non-volatile memory devices

A method for driving a non-volatile memory system is disclosed. A standby detection circuit detects whether the nonvolatile memory system is in a standby condition. In response to determining that the non-volatile memory system is in a standby condition, a bias control circuit reduces bias currents provided to drivers of the non-volatile memory system in a standby mode. The non-volatile memory system is operated in the standby mode after the bias currents have been reduced, where an output signal indicating the standby mode is maintained until a read instruction is detected.

Low standby power with fast turn on for non-volatile memory devices

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San Jose, CA, United States of America

Vineet Argrawal