Stmicroelectronics S.r.l.

Vincenzo Palumbo

Fabrizio Fausto Renzo Toia

Gabriella Ghidini

Enzo Carollo

Elisabetta Pizzi

Paolo Iuliano

Francesco Pulvirenti

Marco Morelli

Dario Paci

Giuseppe Cantone

Francesca Milanesi

Giovanni Caggegi

Fausto Carace

Sonia Pirotta

Mirko Venturato

An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding.

Integrated transformer

A method of manufacturing an electronic device for providing galvanic isolation includes forming a dielectric layer on a semiconductor body and integrating, in the dielectric layer, a galvanic isolation module, the integrating including forming a first metal region at a first height of the dielectric layer. A second metal region is formed at a second height greater than the first height of the dielectric layer, the first and second metal regions being at least one of capacitively and magnetically coupleable together. Forming the second metal region includes etching selective portions of the dielectric layer to form at least one trench having a side wall coupled to a bottom wall through rounded surface portions, and filling each trench with metal material to form the second metal region having rounded edges.

Electronic device with integrated galvanic isolation, and manufacturing method of the same

A circuit provides a high-voltage low-drop diode-like conductive path between a DC voltage supply terminal and a bootstrap terminal in charging a supply capacitor for driving a power switch with the capacitor set between the bootstrap terminal and an output terminal alternatively switchable between a low voltage and a high voltage DC voltage. In an embodiment, the circuit includes first and second transistors such as LDMOS depletion transistors with the first transistor set in a cascode arrangement between the bootstrap terminal and the DC voltage supply terminal and the second transistor coupled with a sense comparator for comparing the voltage at the bootstrap terminal with the voltage at said DC voltage supply terminal. The first and second transistors have common control terminals coupled with the DC voltage supply terminal and common coupling terminals to the bootstrap terminal.

Driver circuit, corresponding integrated circuit and device

An electronic device includes a semiconductor body and a dielectric layer extending over the semiconductor body. A galvanic isolation module includes a first metal region extending in the dielectric layer at a first height and a second metal region extending in the dielectric layer at a second height greater than the first height. The first and second metal regions are capacitively or magnetically coupleable together. The second metal region includes a side wall and a bottom wall coupled to one another through rounded surface portions.

A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.

Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device

A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.

Semiconductor device with integrated magnetic element provided with a barrier structure against metal contamination, and manufacturing

An embodiment of an electronic device includes first and second semiconductor bodies. The first semiconductor body houses a first conductive strip having a first end portion and a second end portion, and houses a first conduction terminal electrically coupled to the first end portion and facing a surface of the first semiconductor body. The second semiconductor body houses a second conductive strip having a third end portion and a fourth end portion, and houses a second conduction terminal electrically coupled to the third end portion and facing a surface of the second semiconductor body. The first and second semiconductor bodies are arranged relative to one another so that the respective surfaces face one another, and the first conduction terminal and the second conduction terminal are coupled to one another by means of a conductive element so as to form a loop of an inductor.

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Vimercate, Italy

Vincenzo Palumbo