Asm IP Holding B.v.

Vincent Vandalon

Shaoren Deng

Anirudhan Chandrasekaran

Marko J Tuominen

Eva E Tois

Charles Dezelah

Andrea Illiberi

Michael Givens

Daniele Chiappe

YongGyu Han

Viraj Madhiwala

The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.

Method and apparatus for forming a patterned structure on a substrate

Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

Selective deposition of material comprising silicon and oxygen using plasma

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Heverlee, Belgium

Vincent Vandalon