General Electric Company

The United States of America As Represented by the United States

Vincent Scott Smentkowski

Ji-Cheng Zhao

Dieter M Gruen

John Patrick Lemmon

John Scott Price

J Albert Schultz

Vance Scott Robinson

Alan R Krauss

Vladimir Anatolievich Lobastov

Tracey Marie Jordan

John C Holecek

A system and method for monitoring and controlling build quality during electron beam manufacturing of a build part. The system may include at least one electron beam source to direct at least one electron beam onto a plurality of deposited layers of metallic powder to form a melt pool, a detector to detect in real-time backscattered energy ejected from the melt pool and indicative of a defect in the build part and generate a detection signal representative of the defect. A controller receives and analyzes the detection signal and generates a corrective signal for control of at least one of the actuator and the at least one electron beam source to direct the at least one electron beam onto the plurality of deposited layers of metallic powder to sequentially consolidate patterned portions of the plurality of deposited metallic powder layers to adaptively form the three-dimensional build part.

System and method for monitoring and controlling build quality during electron beam manufacturing

A method for identification and evaluation of the hydrogen storage capacity of materials is presented, the method comprising providing a plurality of materials, wherein the plurality of materials comprise an array of synthesized hydrides and analyzing hydrogen content in the plurality of materials.

Methods for synthesis and evaluation of hydrogen storage compositions

A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSRI) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle .theta., where .theta. is the angle between the horizontal axis of the mass analyzer and the undeflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, .theta. is less than or equal to about 120.degree. and, more preferably, equal to 74.degree.. For positive ion analysis, the extractor, lens, and front ring of the reflectron are set at negative high voltages (-HV). The back ring of the reflectron is set at greater than about +700V for MSRI measurements and between the range of about +15 V and about +50V for SIMS measurements. The method further comprises inverting the polarity of the potentials applied to the extractor, lens, front ring, and back ring to obtain negative ion SIMS and/or MSRI data.

Time-of-flight SIMS/MSRI reflectron mass analyzer and method

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Clifton Park, NY, United States of America

Vincent Scott Smentkowski