Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Vincent Reboud

Alexei Tchelnokov

Stefan Landis

Vincent Calvo

Alban Gassenq

Salim Boutami

Maryse Fournier

Nicolas Pauc

Kevin Guilloy

Jean-Marc Fedeli

Sylvie Menezo

Jean-Michel Hartmann

Frederic-Xavier Gaillard

Julie Widiez

Pablo Acosta Alba

Frédéric-Xavier Gaillard

Rami Khazaka

Georgio El Zammar

Etienne Rognin

Samuel Tardif

Kévin Guilloy

Lara Casiez

Mathieu Bertrand

A laser includes a distributed Bragg mirror and is configured to emit monochromatic light radiation along a longitudinal direction. The laser has layers, stacked along a first transverse direction normal to the longitudinal direction and made of III-V materials, including an active region configured to emit the radiation. The mirror is formed by periodic lateral corrugations which extend mainly along the longitudinal direction and having a dimension along a second transverse direction normal to the longitudinal direction. The lateral corrugations of the Bragg mirror extend from a top surface of the waveguide pattern along the first transverse direction on a height strictly less than the depth, at which the active region is located starting from the top surface, such that a portion of lateral flanks of the waveguide is free of any lateral corrugations at the active region.

Laser comprising a distributed Bragg mirror and production method thereof

An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value xof proportion of tin less than x, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin x, and vertical structures having an average value xof proportion of tin greater than x, thus forming regions for emitting or for receiving infrared radiation.

Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region

A method for forming a Bragg reflector includes after forming first trenches in the stack, which are intended to form structures of the distributed Bragg reflector, forming a sacrificial interlayer at least in the first trenches, depositing a second masking layer at least inside the first trenches, forming second trenches intended to form sidewalls of the laser, removing the second masking layer from inside the first trenches, removing said sacrificial interlayer so as to remove, by lift-off, residues of the second masking layer that remain inside the first trenches, and filling said first trenches with at least one metal material.

Method of making a distributed Bragg mirror

A process for fabricating an optoelectronic device for emitting infrared radiation, including:

Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layer

An optoelectronic device including a semiconductor layer formed from a central segment and at least two lateral segments forming tensioning arms that extend along a longitudinal axis A. The semiconductor layer furthermore includes at least two lateral segments forming electrical biasing arms that extend along a transverse axis Aorthogonal to the axis A

Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axis

A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

Method for producing a light source and light source

A method for determining at least one reflow parameter for obtaining a structure approximating a sought structure by reflowing an initial structure different to the sought structure, the initial structure including at least one pattern formed in a thermo-deformable layer arranged on a substrate. The thermo-deformable layer forms a residual layer surrounding each pattern and from which each pattern extends such that each pattern has an interface only with the surrounding medium. The method includes: predicting progression over time of geometry of the initial structure subject to reflow, to obtain a plurality of predicted structures each associated with reflow parameters including at least a reflow time and a reflow temperature; computing correlation values of the geometry of each predicted structure with respect to the sought structure; identifying reflow parameters for obtaining the predicted structure offering a highest correlation value.

Method for obtaining at least one structure approximating a sought structure by reflow

The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.

Process for producing a strained layer based on germanium-tin

A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

Semiconductor structure including a suspended membrane containing a central segment of structured thickness

A laser source including a germanium-based semiconductor layer, including a suspended membrane formed of a tensilely stressed central portion and including an optical amplification section, and a plurality of tensioning arms. It includes an integrated waveguide, which participates in forming an optical cavity and which is located level with the carrier layer and at distance from the suspended membrane, the waveguide including a coupling section located facing the optical application section, which is suitable for allowing evanescent-wave optical coupling to the latter, and at least one curved section, which extends the coupling section, and which is arranged so that the integrated waveguide is placed at distance, in orthogonal projection, from the tensioning arms.

Laser source with a germanium-based suspended membrane and an integrated waveguide that participates in forming the optical cavity

The invention relates to a semiconductor structure, including: a semiconductor layer, including a membrane suspended above a carrier layer, the suspended membrane being formed of a central section, which is tensilely stressed and of a plurality of tensioning arms; and least one optical cavity, bounded by two optical reflectors, which are placed in the lateral sections on either side of the central section; wherein: the central section is designed to transmit in the direction of the optical reflectors at least one uneven-order mode; and each of said optical reflectors is formed of two lateral half-reflectors, which are arranged on either side of a longitudinal axis of the lateral section, so as to at least partially reflect said uneven-order mode.

Semiconductor structure comprising a tensilely stressed suspended membrane including an optical cavity

A substrate for surface-enhanced Raman spectography includes a support including an upper surface; a multilayer deposited on the upper surface, with the multilayer including at least two metal layers separated from each other by an intermediate layer, the intermediate layer being selectively etchable with respect to the metal layers, the multilayer being passed through by at least one trench delimited by ends of each one of the layers of the multilayer, each end of each intermediate layer being set back with respect to the end of each metal layer adjacent to the intermediate layer in such a way that the ends of two successive metal layers form metal pins separated by a cavity; a reflective optical system arranged in each trench, with the reflective optical system being arranged to direct inside the cavities an incident light arriving according to an angle with respect to the upper surface of the support.

Method for manufacturing a substrate for surface-enhanced raman spectography and substrate

A substrate for surface-enhanced Raman spectography includes a support including an upper surface; a supporting structure including at least one microstructured pattern, the microstructured pattern including a top and sidewalls, with the sidewalls extending according to a direction secant to the direction of the upper surface; a multilayer arranged on the sidewalls of the microstructured pattern, with the multilayer including at least two pillar layers, separated from each other by an intermediate layer, each intermediate layer having an end set back with respect to an end of each adjacent pillar layer in such a way that the ends of two successive pillar layers form pins separated by a cavity, with the ends of the pillar layers being covered by a metal layer.

Method for manufacturing a substrate for surface-enhanced Raman spectography and substrate

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Method of production of a semiconducting structure comprising a strained portion

The invention pertains to formation of a semiconducting portion () by epitaxial growth on a strained germination portion (), comprising the steps in which a cavity () is produced under a structured part () by rendering free a support layer () situated facing the structured part (), a central portion (), termed the strained germination portion, then being strained; and a semiconducting portion () is formed by epitaxial growth on the strained germination portion (), wherein the structured part () is furthermore placed in contact with the support layer () in such a way as to bind the structured part () of the support layer.

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Paris, France

Vincent Reboud