Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Vincent Mazzocchi

Laurent Grenouillet

Sylvain Maitrejean

A method for forming a layer by cycled epitaxy includes at least one sequence of steps each having a first epitaxial deposition forming a first growth layer portion having a first thickness on a first monocrystalline pattern and a second growth layer portion having a second thickness on a second non-monocrystalline pattern, the second thickness being greater than the first thickness, and a second epitaxial deposition forming a first sacrificial layer portion having a third thickness on the first growth layer portion and a second sacrificial layer portion having a fourth thickness on the second growth layer portion. The first and second growth layer portions have an additional element content, greater than the additional element content present in the first and second sacrificial layer portions. The sequence also includes etching the whole of the third and fourth thicknesses and stopping before having consumed the whole of the first thickness.

Method for forming a layer by cyclic epitaxy

Field-effect transistor, the source and drain regions whereof are formed from a crystalline structure comprising:

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Grenoble, France

Vincent Mazzocchi