Plasma-therm Nes LLC

Mattson Technology, Inc

Vincent Lee

Sarpangala Hariharakeshava Hegde

Stephen E Savas

Rene George

Jonathan David Mohn

Daniel J Devine

Martin L Zucker

Ryan M Pakulski

Dixit V Desai

Charles Crapuchettes

Peter Goglia

Wei-Hua Hsiao

Yuya Matsuda

Joseph Barraco

The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam deposition or etch process to correct asymmetry of depositing or etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of the respective deposition or etch across the full wafer.

Scanning ion beam deposition and etch

A magnetic connector assembly has a female connector with spring-loaded conductive pins slightly protruding inside a recess or cavity in the female connector's body. A corresponding male connector has a protrusion on its body with conductive pins slightly indented into the protrusion's surface. The protrusion on the male connector is sized and shaped to fit into the cavity in the female connector such that the male connector's pins engage the pins of the female connector, allowing for electrical communication across the connector assembly. Magnets on the male and female connectors secure them in a correct orientation. A unique shape ensures proper alignment of the pins and prevents the connection of incompatible devices.

Magnetic connector assembly

The present disclosure provides a method for increased target utilization within a sputtering system. A plurality of targets are provided wherein each target is operatively connected to a central axis. An ion beam is generated within the sputtering system. The generated ion beam is directed at a first location of a first target for a first time period. Each target is moved by rotating the central axis. The generated ion beam is directed at a second location of the first target for a second time period.

Ion beam deposition target life enhancement

The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

Scanning ion beam etch

Vaporizer cartridge removal tool

The present invention provides a charged particle source comprising a plasma processing chamber that has a plasma source, a gas supply and an ion extraction grid that are each operatively connected to the processing chamber. A conducting plate is located adjacent to a wall of the plasma source. The conducting plate has a surface with a plurality of grooves that face the wall of the plasma source. A substrate support is disposed within an interior portion of the processing chamber for supporting a substrate.

Powered anode for ion source for DLC and reactive processes

A planetary arm coupled to a tilt actuator moves a wafer in oscillatory motion along an arcuate path to expose a surface of the wafer to an incident ion beam for deposition and/or etching processing of thin film structures on the surface of the wafer. A wafer holder on an end of the planetary arm may be driven in rotation while the planetary arm executes oscillatory motion at a selected tilt angle relative to an incident ion beam. A slit support plate provides controllable exposure of the wafer to the incident beam. Embodiments are suitable for use in wafer deposition machines and/or wafer etching machines.

Wafer stage for symmetric wafer processing

An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

Growing community of inventors

Fremont, CA, United States of America

Vincent Lee