Commissariat a L'energie Atomique

Stmicroelectronics S.a.

Vincent Le Goascoz

Joseph Borel

Robert Poujois

Luc Audaire

Didier Belot

Herve Jaouen

Denis Pache

Andre Chenevas-Paule

Herv&eacute; Jaouen

Corinne Berland

Jean-François Bercher

Isabelle Hibon

Martine Villegas

Pierre Viktorovitch

A signal modulation device comprises a delta-sigma modulator disposed for transforming an amplitude-modulation signal in baseband into a pulse signal. It also comprises a phase modulator receiving, at its input, analogue phase-modulation signals in baseband. The pulse signal is mixed with carrier signals upstream of the phase modulator. The modulation device is designed to form an input stage of a transmitter.

Modulation device and transmitter comprising such a device

The invention concerns a method comprising: 1) a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating material above a sectional plane of said first substrate, contacting the first layer of insulating material with the insulating upper part of a second initial substrate, so as to form a single layer of insulating material, a break at the sectional plane, so as to obtain an intermediate semiconductor substrate on the single insulating material layer; then, 2) in a second phase which consists in forming in the intermediate semiconductor substrate an additional insulating material layer adjacent to the single insulating material and topped with an upper layer of a final semiconductor substrate.

Method for making a SOI semiconductor substrate with thin active semiconductor layer

A method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and resting on another insulative material includes forming a layer of a first insulative material, and forming on the top main surface of the first semiconductor substrate a thin semiconductor layer forming the islet of semiconductor material. The thin semiconductor layer can be selectively etched relative to the first semiconductor substrate. A layer of a second insulative material is formed on exposed surfaces of the islet of semiconductor material and the thin semiconductor layer. The method further includes removing the first semiconductor substrate.

Method of fabricating a silicon-on-insulator system with thin semiconductor islets surrounded by an insulative material

The invention relates to a process and to an apparatus for treating semiconductor devices. A hydrogen plasma is created in the vicinity of the semiconductor devices and the positively polarized plasma particles are removed therefrom. A tightly sealed enclosure is provided and contains two plane, parallel electrodes polarized so as to form an anode and a cathode. Heating means are located in the vicinity of the anode.

Process for treating semiconductor devices under atomic hydrogen plasma

The method consists in fabricating an MOS transistor comprising a drain region and a source region separated from each other by a bulk region of opposite doping type relative to the first two regions, in delivering the radiation to be detected into the carrier-collection region of the MOS transistor, in leaving the bulk region at a floating potential and in collecting the drain-source current of the transistor.

Method and device for detecting radiatons

In a method and a device for storing analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage.

Method and device for the storage of analog signals

Method and device for the integration of analog signals

In a method and a device for multiplying analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage. A multiplication of two corresponding terms is performed by recording the signal which is proportional to one sample of a function in the memory of the multiple dielectric layer type and by applying a given voltage to the gate of the transistor so as to generate a signal which is a linear function of the threshold voltage which is in turn a linear function of the writing signal at the input of a multiplier circuit. There is also applied to the multiplier circuit a signal which is a linear function, a sample of another function which is to be multiplied term by term with the first function.

Growing community of inventors

Claix, France

Vincent Le Goascoz