Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Vincent Fiori

Richard P Fournel

François Roy

Pierre Bar

Denis Rideau

Philippe Delpech

Sandrine Lhostis

Frédéric Gianesello

Nicolas Hotellier

Olga Kokshagina

Jean-Christophe Giraudin

François Guyader

Yann Beilliard

Sebastien Gallois-Garreignot

Sébastien Gallois-Garreignot

Clement Tavernier

An electronic device has a rear plate that includes a substrate rear layer, a substrate front layer and a dielectric intermediate layer between the substrate rear and front layers. An electronic structure is on the substrate front layer and includes electronic components and electrical connections. The substrate rear layer includes a solid local region and a hollowed-out local region. The hollowed-out local region extends over all of the substrate rear layer. The substrate rear layer does not cover at least one local zone of the dielectric intermediate layer corresponding to the hollowed-out local region.

Electronic device with hollowed-out rear plate

A method and corresponding system are provided for determining a three-dimensional stress field of an object having a flat surface. At least four flat resistors are placed on the flat surface of the object, with at least one of the resistors having a geometry different from that of the others. A variation of resistance of the resistors is measured. The three-dimensional stress field is determined from a system of equations involving the stress field, values of variations of the measured resistive values and sensitivity parameters of the resistors.

Method for determining a three-dimensional stress field of an object, an integrated structure in particular, and corresponding system

A device includes a support, a three-dimensional integrated structure above the support, and a lateral encapsulation region arranged around the structure. The lateral encapsulation region includes first channels configured to make it possible to circulate a cooling fluid.

Device comprising a three-dimensional integrated structure with simplified thermal dissipation, and corresponding fabrication method

A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the &#x3c;110&#x3e; type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

PMOS transistor with improved mobility of the carriers

A method for manufacturing an image sensor, including the steps of: forming elementary structures of an image sensor on the first surface of a semiconductor substrate; installing a layer on the first surface; defining trenches in the layer, the trenches forming a pattern in the layer; and installing, on a hollow curved substrate, the obtained device on the free surface side of the layer, the pattern being selected according to the shape of the support surface.

Image sensor of curved surface

An integrated circuit includes at least one capacitor that is formed on a layer provided with at least one first trench. The capacitor, which is provided with a dielectric layer that separates two electrodes, conforms to the shape of the first trench, but leaves a part of the first trench unfilled. A material capable of absorbing stresses associated with the displacements of the walls of the trench is placed in the trench to fill the part of the first trench. A second trench is formed at least partly surrounding the first trench. This second trench is also at least partly filled with a material capable of absorbing stresses associated with the displacements of the walls of the second trench. A void may be included in the stress absorbing material which fills either of the first or second trenches.

Integrated circuit comprising at least one capacitor and process for forming the capacitor

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Grenoble, France

Vincent Fiori