Lucent Technologies Inc.

Nokia Solutions and Networks Oy

Alcatel-lucent USA Inc.

Alcatel Lucent

Vincent Etienne Houtsma

Young-Kai Chen

Doutje T Van Veen

Nils Guenter Weimann

Andreas Leven

Amitkumar Mahadevan

Yang Yang

Chun-Ting Liu

Rose Fasano Kopf

Lay-Lay Chua

Wei-Jer Sung

Jochen Maes

Yannick Lefevre

Hungkei Keith Chow

Yves Baeyens

Doutje Van Veen

Mohand Achouche

Adriaan De Lind Van Wijngaarden

Michaël Fivez

Edward Harstead

Various embodiments of the disclosed PON system enable approximate leveling of the optical-modulation amplitudes in a sequence of optical bursts received by a system's OLT from a plurality of ONUs. Some embodiments additionally enable approximate leveling of the average optical power, received at the OLT from different ONUs, in such a sequence. Some embodiments may rely on control messaging between the OLT and ONUs to perform one or both types of leveling. The disclosed leveling may advantageously provide an effective tool for optimizing upstream transmission for high-speed TDM-PONs.

Control of optical-modulation amplitude for burst-mode transmission

Apparatus and method are disclosed that utilize a particular delay modulation technique (i.e., Miller coding) to encode 25 Gb/s data for inclusion with the 50 Gb/s NRZ data in a downstream broadcast transmission from an optical line terminal (OLT) to a plurality of optical network units (ONUs) through an optical distribution network (ODN). The specific Miller coding technique allows for a secondary data stream, operating at half the rate of the NRZ data) to supplement the primary 50 Gb/s NRZ transmission, since both signals are recovered using the same clocking circuitry at the ONU.

Flexible rate passive optical network incorporating use of delay modulation

An optical line terminal (OLT) operating within a multi-rate PON is configured to perform downstream timeslot scheduling among an associated number of ONUs so as to minimize the change in information rate from one scheduled ONU timeslot to the next. In this manner, the clock recovery component at each ONU is best able to follow the change in information rates, remaining locked on the system clock regardless of the specific implementation of the clock and data recovery (CDR) functionality at a given ONU. The OLT may schedule timeslot assignments that span a pair of adjacent parts (referred to as a two-part cycle), with the first part having timeslots assigned from the lowest information rate (e.g., NRZ) to the highest (e.g., PAM4) and the second part's timeslots assigned in the reverse order; that is, from the highest to the lowest information rate.

Method and apparatus for downstream timeslot scheduling in multi-rate passive optical networks

Various example embodiments for supporting forward error correction (FEC) in a communication system are presented. Various example embodiments for supporting FEC in a communication system may include the selection of a FEC setting for a communication channel from a transmitter to a receiver, e.g., the selection of a FEC setting for a communication channel, the selection of a FEC setting for a data burst sent over a communication channel, the selection of a FEC setting for a portion of a data burst sent over a communication channel, switching between FEC settings for different portions of a data burst over a communication channel, or the like, as well as various combinations thereof.

Forward error correction control

A passive optical network having an optical-signal monitor configured to monitor carrier-wavelength drifts during optical bursts transmitted between the optical line terminal and optical network units thereof. In an example embodiment, the optical-signal monitor uses heterodyne beating between two differently delayed portions of an optical burst to generate an estimate of the carrier-wavelength drift during that optical burst. The passive optical network may also include an electronic controller configured to use the estimates generated by the optical-signal monitor to make configuration changes at the optical network units and/or implement other control measures directed at reducing to an acceptable level the amounts of carrier-wavelength drift during the optical bursts and/or mitigating some adverse effects thereof.

Optical burst monitoring

An optical line terminal transmitter front-end, an optical network terminal receiver front-end and a bit-interleaved passive optical network (BIPON). In one embodiment, the transmitter front-end includes: (1) a bit interleaver configured to group and interleave a plurality of user bit-streams to yield a combined single bit-stream, (2) an encoder coupled to the bit interleaver and configured to encode multiple bits of the single bit-stream into a multi-level code corresponding to a 2-level multi-level signal and (3) a multi-level modulator coupled to the encoder and configured to modulate the multi-level code into the 2-level multi-level signal.

Circuit and method for optical bit interleaving in a passive optical network using multi-level signals

An optical device includes a waveguide slab, first and second input port couplers, and first and second output port couplers located over a planar optical substrate. The waveguide slab has a plane of symmetry. The first and second input port couplers extend from the waveguide slab and have an input coupler pair axis located about midway between the first and second input port couplers. The input coupler pair axis is offset at a nonzero first distance from the plane of symmetry. The first and second output port couplers extend from the waveguide slab and have an output coupler pair axis located about midway between the first and second output port couplers. The output coupler pair axis is offset at a different nonzero second distance from the plane of symmetry.

Monolithic photonic integrated circuit

An optoelectronic receiver and associated method of operation.

Optoelectronic receiver

A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

Bipolar transistors with vertical structures

An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.

Monlithically coupled waveguide and phototransistor

Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 &#x212b; and about 1000 &#x212b;. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.

Transistors and methods for making the same

Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.

Growing community of inventors

Berkeley Heights, NJ, United States of America

Vincent Etienne Houtsma