Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université Du Mans

Vincent Derycke

Jean-Philippe Bourgoin

Marcelo Goffman

Dominique Ausserre

Renaud Cornut

Stéphane Campidelli

Manuel Ausserre

Julien Borghetti

Nicolas Chimot

Patrick Soukiassian

Andrew Mayne

Stéphane Auvray

Pascale Mordant

Arianna Filoramo

Patrick Soukiassan

Gérald Dujardin

A contrast-amplifying carrier for observing a sample, includes a transparent substrate bearing at least one absorbent coating suitable for behaving as an antireflection coating when it is illuminated at normal incidence at an illumination wavelength &#x3bb; through the substrate and when the face of the coating opposite the substrate is in contact with a medium referred to as a transparent ambient medium, the refractive index nof which is lower than that of the refractive index nof the substrate. The absorbent coating comprises: an absorbent sublayer referred to as the contrast sublayer, deposited on the surface of the transparent substrate; and an absorbent layer referred to as the sensitive layer, distinct from the contrast sublayer and comprising between 1 and 5 sheets of a graphene-type material. Methods for producing and for using such a contrast-amplifying carrier are also provided.

Contrast-amplifying carriers using a two-dimensional material

A method is provided for positioning a micro- or nano-object on a planar support by displacement performed under visual control, wherein the micro- or nano-object is immersed in a transparent medium, called ambient medium, having a refractive index n; the planar support comprises a transparent substrate of refractive index n&#x3e;non which is deposited at least one optically absorbent layer, adapted to behave as antireflection coating when it is lit at normal incidence with a lighting wavelength &#x3bb; through the substrate; and the visual control comprises the lighting of the micro- or nano-object at least with the wavelength &#x3bb; through the substrate, and the observation thereof also through the substrate. A method to scanning probe microscopy and to the assembly of nanostructures is provided.

Method and apparatus for positioning a micro- or nano-object under visual observation

A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.

Carbon nanotube field effect transistor

The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity &#x2208;, which satisfy &#x2208;&#x3e;0.2 nm*1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.

Device for detecting/storing electromagnetic beams, method for making same, and use thereof and imager incorporating same

The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R, Rand Rare chosen in the group comprising (H, F, Cl, Br, I) with at least one of R, Rand Rbeing different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor. 

Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it

The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.

Optically-configurable nanotube or nanowire semiconductor device

A process treats a surface of a semiconductor material in order to put the surface into a predetermined electrical state. The semiconductor material is preferably monocrystalline. The process includes (a) preparing the surface of the semiconductor material such that the surface has a controlled organization at an atomic scale such that the surface is capable of combining with a chosen material, and (b) combining the surface thus prepared with a material chosen from among hydrogen, molecules containing hydrogen, metals, organic molecules and inorganic molecules, wherein the preparing and the combining the surface with the material cooperate to obtain the predetermined electrical state of the surface.

Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process

Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate () is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2&#xd7;2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C&#x2261;C (4) of sp configuration, into a plane of dimers C&#x2014;C (8) of spconfiguration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.

Growing community of inventors

Montigny le Bretonneux, France

Vincent Derycke