Varian Semiconductor Equipment Associates, Inc.

Vincent Deno

Vikram Singh

Ziwei Fang

Harold M Persing

Richard Appel

Ludovic Godet

George D Papasouliotis

A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.

Profile adjustment in plasma ion implanter

A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

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Gloucester, MA, United States of America

Vincent Deno