Thales

Centre National De La Recherche Scientifique

Université Paris—sud

Université Paris-sud 11

Université Paris-saclay

Vincent Cros

Julie Grollier

Frédéric Nguyen Van Dau

Albert Fert

Bruno Marcilhac

Paolo Bortolotti

Jean-Claude Mage

Julien Kermorvant

Joao Sampaio

Henri Jaffres

Damien Querlioz

Pierre Bessiere

Nicolas Locatelli

Jacques Droulez

Alexey Vasilyevich Khvalkovskiy

Romain Lebrun

Loïc Morvan

Abdelmadjid Anane

Manuel Munoz Sanchez

Daniele Pinna

Jean-Marie George

Frédéric Petroff

Noah Van Horne

Nicolas Reyren

Pierre Seneor

Perrine Berger

Martin Collet

Olivier D'ALLIVY Kelly

Disclosed is a method for generating, from a first electric current having a first frequency, a plurality of second currents each having a second respective frequency component, the method including the following steps: supplying a frequency distributor including a first set of pillars including a layer made from a first magnetic material and having a resonance frequency; exciting each pillar of the first set with an electromagnetic field having the first frequency, the ratio between twice the resonance frequency of each pillar of the first set and the first frequency being equal, to within ten percent, to a first natural integer; and generating, by each pillar of the first set, a second frequency component in the second respective current.

Method for generating a plurality of currents each having a frequency

A device for generating a random electric signal, including an input duct, an output duct, a generator of magnetic particles generating magnetic particles in the input duct, a diffusion chamber connected to the input duct and the output duct, wherein the diffusion chamber is designed to diffuse the generated magnetic particles, a displacement unit for displacement of the generated magnetic particles towards the diffusion chamber, and a converter that is designed to generate an electrical signal proportional to a characteristic, wherein the characteristic is the particle density in the diffusion chamber or the passage of magnetic particles at a predetermined location of an output duct connected to the diffusion chamber.

Device for generating a random electrical signal and associated architecture

A spectrum analyzer for a signal Icomprising a plurality of frequencies fcomprises N entities each made up of a structure formed by a stack of magnetic and non-magnetic layers having in at least one of the magnetic layers a magnetic configuration in the shape of a vortex, the excitation modes of the magnetic configuration being suitable for detecting the frequencies contained in an incident signal in real time, each entity having a first lower electrode and a second upper electrode, a voltage-measuring device suitable for measuring an electric voltage showing the presence of a frequency fin the analyzed signal I, the device being connected to the lower electrode and to the upper electrode, a measurement-processing device suitable for determining the value of the frequencies fin the signal I, and a line carrying the signal to be analyzed to each of the entities.

Analog spectrum analyzer

Disclosed is a system () for generating skyrmions, including: a gun () including a wall-forming region () made from a first material, the region () defining an outer space () made from a second material different from the first material and an inner space () made from a third material different from the first material, the second material and the third material being magnetic materials; and a magnetization reversal device () that can reverse the magnetization at the interface between the region () and the inner space ().

Skyrmion generation system

A storage device, comprising at least one spintronic element suitable for representing a state among at least n states associated with the spintronic element, n&#x3e;1, characterized in that each of the n states is associated with at least one characteristic of a group of magnetic skyrmions in the spintronic element, and in that said characteristic associated with a state ni is different from said characteristic associated with a state nj when the states ni and nj are two different states among the n states.

Memory device, comprising at least one element and associated method spintronics

An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.

Spintronic oscillator, and use thereof in radiofrequency devices

A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.

Memristor device with resistance adjustable by moving a magnetic wall by spin transfer and use of said memristor in a neural network

The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.

Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers

The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.

Control device for reversing the direction of magnetisation without an external magnetic field

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Paris, France

Vincent Cros