Stmicroelectronics S.a.

Centre National De La Recherche Scientifique

Institut National Polytechnique De Grenoble

Stmicroelectronics (rousset) Sas

Vincent Cosnier

Yves Morand

Daniel Bensahel

Yves Campidelli

Olivier Kermarrec

Sandrine Lhostis

Catherine Anne Dubourdieu

Daniel-Camille Bensahel

Erwan Yann Rauwel

Catherine Dubourdieu

An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.

Integrated electronic circuit including a thin film portion based on hafnium oxide

A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one ring of discontinuities around a useful region.

Heteroatomic single-crystal layers

A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of SiGe, where 0.5&#x3c;x&#x2266;1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).

Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material

Growing community of inventors

Grenoble, France

Vincent Cosnier