Gte Products Corporation

Gte Sylvania Incorporated

Vincent Chiola

Sixdeniel Faria

Albert K Fan

Fred R Taubner

A manganese-activated zinc silicate phosphor contains a small amount of tungsten dispersed throughout the phosphor matrix. The tungsten improves maintenance of a fluorescent lamp in which the phosphor is used.

Tungsten-containing zinc silicate phosphor

A fluorescent lamp has a phosphor coating on the interior surface of the lamp envelope. Dispersed throughout the coating is a melted and solidified amorphous borate-phosphate frit to improve the adhesion of the phosphor.

Fluorescent lamp containing adhesive frit in phosphor coating

A frit material that improves the adhesion of phosphor coatings in fluorescent lamps has the general composition (Ca,Ba)O.B.sub.2 O.sub.3.P.sub.2 O.sub.5.

Frit material for use with phosphor coating in fluorescent lamp

A composition consisting essentially of discrete particles of cadmium sulfide that are relatively free of anionic, cationic and volatile impurities has an average particle size of from about 8 to about 25 micrometers and a bulk density of from about 1.7 to about 1.9 grams per cubic centimeter and has superior properties for use in solar energy applications. The composition is prepared by forming a finely-divided impure cadmium sulfide by chemical precipitation, heating the resulting precipitate to an intermediate temperature in a flow of an inert gas, heating the material at an elevated temperature in a flowing sulfide atmosphere selected from hydrogen sulfide and carbon disulfide and cooling the heated material in a sulfide atmosphere to about the intermediate temperature and cooling to ambient temperature in an inert gas.

Solar energy grade cadmium sulfide

An electrophotoconductive material having the molecular formula: Cd(S.sub.x Se.sub.1-x):yCu.zCl is improved by controlling x in the range of from about 0.95 to about 0.98, y from about 0.0001 to about 0.001 and z is from about 0.001 to about 0.0015. The materials also have a relatively narrow particle size distribution and a relatively fine particle size and the surfaces relatively free of p-type copper sulfide. The improved materials exhibit and maintain a large differential between the image voltage and the background voltage of in excess of 800 volts when the material is used as an electrophotoconductive layer in a photosensitive member of equipment used in electrophotograhic copying processes. The photosensitive member consisting essentially of a conductive base, and electrophotoconductive layer of from about 40 to 60 micrometers overlaying the base consisting of the foregoing electrophotoconductive material and an insulating layer of from about 20 to 40 micrometers overlaying the electrophotoconductive layer exhibits improved contrast properties and a longer life than prior art members when used in an electrophotographic reproduction process.

Electrophotoconductive Cd S Se materials with Cu and Cl

A fluorescent screen is disclosed which comprises a plastic film support layer, a reflectance layer of vacuum-deposited aluminum on said support layer, and a layer of fluorescent material dispersed in an organic polymeric binder located on said reflectance layer. A method for making the above screen is also disclosed.

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Towanda, PA, United States of America

Vincent Chiola