Taiwan Semiconductor Manufacturing Comp. Ltd.

Cellaed Life Saver Pty Ltd

Other

Longwell Company

Trend Micro Inc.

Megatouch International, Inc.

Megatech International, Inc.

Vincent Chen

Chuei-Tang Wang

Wei-Ting Chen

Chen-Hua Douglas Yu

Kai-Chiang Wu

Chun-Lin Lu

Tzu-Chun Tang

Hung-Yi Kuo

Ming Hung Tseng

Hao-Yi Tsai

Ching-Feng Yang

Marco Heusdens

Shou Zen Chang

Berling Tang

Yen-Liang Lin

Yen-Ping Wang

Wei-Ting Lin

In-Tsang Lin

Shou-Zen Chang

Ming-Kai Liu

Wendy Hung

Hsien-Wei Chen

Tien-Chih Tseng

Andrew S Lee

Yen Chuang

Yuji Yamasaki

Samuel Pu

Pender Chang

Descartes Chen

Jill Yang

Charles Yu

Jayce Chang

A method for manufacturing a loudspeaker having a wire damper with locally adjustable elasticity, including preparation, impregnating, drying, wire disposing, forming, cutting and assembling steps. Wherein, a wire damper including a main body and a wire is thermoformed on a base material. The main body includes a wave structure and a wire disposing area. The wave structure includes wave crest and trough, and inner and outer sidewalls. The wire disposing area forms a hollow portion in which the wire extends. The warp yarns at outside and inside of the wire disposing area form an elastic adjustment area. The hollow portion has smaller depths at the inner and outer sidewalls than at the wave crests and troughs. Thereby, the wire will not be damaged by hot pressing, and the hardness, elasticity and toughness of the combination of the wire disposing area and the wire are equal to that of other areas.

Method for manufacturing loudspeaker having wire damper with locally adjustable elasticity

Defibrillator

A method of manufacturing a semiconductor device includes providing a semiconductor die and surrounding a sidewall of the semiconductor die with a dielectric material. The method further includes forming a post passivation interconnect (PPI) over the semiconductor die and electrically coupling the PPI with the semiconductor die. The method further includes molding the semiconductor die and the PPI into an integrated semiconductor package. The method further includes covering at least a portion of an outer surface of the integrated semiconductor package with a conductive layer, wherein the conductive layer is conformal to the morphology of the portion of the outer surface. Moreover, the method further includes forming a conductive path inside the integrated semiconductor package electrically coupled to the conductive layer and a ground terminal of the integrated semiconductor package.

Manufacturing method of a semiconductor device

A method for manufacturing a loudspeaker vibrating membrane with hard and elastic soft properties, comprising: (a) adhering a curable polymer to all areas on the outer surface of a base material; (b) drying the curable polymer to form a hard structure; (c) forming a loudspeaker vibrating membrane; and (d) separating the loudspeaker vibrating membrane from the base material. The method further comprises the following steps between steps (b) and (c) or steps (c) and (d), or after step (d): (e) adhering an elastic soft polymer to all or partial areas on the outer surface of the hard structure; and (f) drying the elastic soft polymer to form an elastic soft structure covering all or partial areas on the outer surface of the hard structure. In the present invention, the hardness and elastic coefficient of the loudspeaker vibrating membrane can be adjusted by the hard structure and the elastic soft structure.

Loudspeaker vibrating membrane with hard property and elastic soft property and method for manufacturing the same

A loudspeaker includes a loudspeaker body, a voice coil and a damper. The damper includes a main body, a wire and a first fixing sewing thread. The first fixing sewing thread includes a first sewing part including first to fourth wire winding portions and first to third yarn winding portions. The first and third wire winding portions extend from one side of the wire through upside of the wire to the other side of the wire while the second and fourth wire winding portions extend in the opposite direction The first to third yarn winding portions connect adjacent two wire winding portions and pass under one of the weft yarns, respectively.

Loudspeaker having damper with wire fixed by sewing thread

A method for manufacturing a loudspeaker includes arranging, weaving, impregnating, drying, forming, cutting and assembling steps. In the arranging step, warp yarns and wires are arranged at intervals, and the wires are grouped as a wire group. In the weaving step, weft yarns are arranged at intervals and interwoven with the warp yarns and the wires to form a base material by weaving, and an area where the weft yarns are interwoven with the wires is defined as a wire disposing area. In the forming step, a wire damper is formed on the base material by thermoforming; two elastic adjustment areas are formed at the weft yarns between both sides of the wire group and the warp yarns closest to both sides of the wire group; and widths of the elastic adjustment areas are equal to each other and larger than distances between the remaining warp yarns.

Loudspeaker having damper with woven wire and method for manufacturing the same

Defibrillator case

Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a first molding material disposed around the integrated circuit die, and a through-via disposed within the first molding material. A first side of a redistribution layer (RDL) is coupled to the integrated circuit die, the through-via, and the first molding material. A second molding material is over a second side of the RDL, the second side of the RDL being opposite the first side of the RDL. The packaged semiconductor device includes an antenna over the second molding material.

Packaged semiconductor devices and packaging methods

A semiconductor device includes a semiconductor die having an insulative layer and a conductive feature in the insulative layer, and a shield in contact with a lateral surface of the conductive feature. In some embodiments, the lateral surface of the conductive feature is aligned with an edge of the insulating material.

Semiconductor device

A semiconductor structure includes a transceiver, a molding surrounding the transceiver, and a RDL disposed over the transceiver. The RDL includes an antenna and a dielectric layer. The antenna is disposed over and electrically connected to the transceiver. The dielectric layer surrounds the antenna. The antenna includes an elongated portion and a via portion. The elongated portion extends over the molding, and the via portion is electrically connected to the transceiver.

Semiconductor structure

A semiconductor structure includes a transceiver, a molding surrounding the transceiver, a plurality of vias extending through the molding, and a RDL disposed over the transceiver and the plurality of vias. In some embodiments, the RDL includes an antenna disposed over and electrically connected to the transceiver, and a dielectric layer surrounding the antenna. In some embodiments, the antenna includes an elongated portion extending over the molding and a via portion electrically connected to the transceiver.

Growing community of inventors

Taipei, Taiwan

Vincent Chen