Other

Taiwan Semiconductor Manufacturing Comp. Ltd.

Vincent Chang

Tze-Liang Lee

Chien-Hao Chen

Chia-Lin Chen

Shih-Chang Chen

Chi-Chun Chen

Ji-Yi Yang

Hun-Jan Tao

Kuei Shun Chen

Peng-Soon Lim

George Liu

Norman Chen

Jin Ying

Fong-Yu Yen

Chun-Lin Wu

Photolithography processing methods by which a photoresist layer is deposited, a portion of the photoresist layer is exposed to electromagnetic radiation to transfer a reticle pattern thereto, and the exposed portion of the photoresist layer is treated with thermal energy while being subjected to an electric field, wherein the electric field is configured to substantially limit diffusion of the exposed photoresist layer portion to anisotropic diffusion.

Utilization of electric field with isotropic development in photolithography

A semiconductor structure having a high-k dielectric and its method of manufacture is provided. A method includes forming a first dielectric layer over the substrate, a metal layer over the first dielectric layer, and a second dielectric layer over the metal layer. A method further includes annealing the substrate in an oxidizing ambient until the three layers form a homogenous high-k dielectric layer. Forming the first and second dielectric layers comprises a non-plasma deposition process such atomic layer deposition (ALD), or chemical vapor deposition (CVD). A semiconductor device having a high-k dielectric comprises an amorphous high-k dielectric layer, wherein the amorphous high-k dielectric layer comprises a first oxidized metal and a second oxidized metal. The atomic ratios of all oxidized metals are substantially uniformly within the amorphous high-k dielectric layer.

Multi-metal-oxide high-K gate dielectrics

A cargo bracing device includes a base having two side plates for rotatably attaching a reel drum, one or more toothed discs attached to the reel drum and controlled to rotate relative to the base with a stop, an operating arm having two legs rotatably attached to the reel drum, a catch device attached to the operating arm and engaged with the toothed disc, and an anchoring device may detachably anchor the legs of the operating arm to the reel drum, and the legs of the operating arm may be selectively disengaged from the reel drum to prevent the operating arm from being operated by unauthorized persons, and for preventing the cargo from being stolen by the unauthorized persons.

Cargo bracing device

A ratchet buckle device includes a base having two side plates rotatably attached to a reel drum, one or more toothed discs attached to the reel drum and latched to the base with a stop, an operating arm having two legs rotatably attached to the reel drum, a catch device latching the operating arm to the toothed disc, and a latch pivotally attached to the side plates for engaging with the toothed disc, and for allowing the latch to be tilted relative to the side plates, and the ratchet buckle device includes an improved structure for allowing the ratchet buckle device to be easily operated and for allowing the belt or strap to be temporarily released and to be easily unlocked or unfastened.

Ratchet buckle device

A new and improved liner modification method for a liner oxide layer in an STI trench is disclosed. According to the method, an STI trench is etched in a substrate and a liner oxide layer is formed on the trench surfaces by oxidation techniques. The method further includes pre-treatment of the trench surfaces using a nitrogen-containing gas prior to formation of the liner oxide layer, post-formation nitridation of the liner oxide layer, or both pre-treatment of the trench surfaces and post-formation nitridation of the liner oxide layer. The liner modification method of the present invention optimizes the inverse narrow width effect (INWE) and gate oxide integrity (GOI) of STI structures and prevents diffusion of dopant into the liner oxide layer during subsequent processing.

STI liner modification method

A method for forming a divot free nitride lined shallow trench isolation (STI) feature including providing a substrate including an STI trench extending through an uppermost hardmask layer into a thickness of the substrate exposing the substrate portions; selectively forming a first insulating layer lining the STI trench over said exposed substrate portions only; backfilling the STI trench with a second insulating layer; planarizing the second insulating layer; and, carrying out a wet etching process to remove the uppermost hardmask layer.

Selective nitride liner formation for shallow trench isolation

A cable tightening device includes a fixed unit, a rotation member, two opposite ratchet wheels, and a movable unit. The movable unit includes a movable member, a drive handle and two opposite torsion springs. Thus, the torsion springs are arranged on the movable member symmetrically to provide a predetermined elastic force to the drive handle to eliminate an oblique force produced during the movement of the drive handle, so that the push plates of the drive handle are slidable in the guide slots of the movable member smoothly and exactly without incurring deflection.

Cable tightening device operated conveniently

A method of defining a conductive gate structure for a MOSFET device wherein the etch rate selectivity of the conductive gate material to an underlying insulator layer is optimized, has been developed. After formation of a nitrided silicon dioxide layer, to be used as for the MOSFET gate insulator layer, a high temperature hydrogen anneal procedure is performed. The high temperature anneal procedure replaces nitrogen components in a top portion of the nitrided silicon dioxide gate insulator layer with hydrogen components. The etch rate of the hydrogen annealed layer in specific dry etch ambients is now decreased when compared to the non-hydrogen annealed nitrided silicon dioxide counterpart. Thus the etch rate selectivity of conductive gate material to underlying gate insulator material is increased when employing the slower etching hydrogen annealed nitrided silicon dioxide layer.

High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layer

A connector device includes a base coupled to a strap and having a chamber formed between two side panels and having a curved slot formed in each of the side panels. A connector frame is rotatably secured to the base with an axle, a shaft is attached to the frame and slidably engaged in the curved slots of the side panels of the base, to guide the shaft to slide in the curved slots of the base. A latch is slidably attached to the frame to selectively lock the frame to the base. Another strap has an intermediate segment engaged over the shaft and engaged around the axle, and may be selectively tightened by the shaft.

Connector device for suspending straps

A method of determining a composition of an integrated circuit feature, including collecting intensity data representative of spectral wavelengths of radiant energy generated by a plasma during plasma nitridation of an integrated circuit feature disposed on a substrate, analysing the in intensity data to determine a peak intensity at one of the wavelengths, and determining a component concentration of the feature based on the peak intensity.

Method and system for determining a component concentration of an integrated circuit feature

Hanger

A rope tensioning device includes a support base, a handle, a connecting post, two fixing plates, two ratchet wheels, two locking blocks, two shafts, a snap ring, two elastic members, two insertion pins, a bolt, a nut, and a fixing pin. Thus, the rope tensioning device can be assembled rapidly and conveniently, thereby greatly reducing costs of assembly. In addition, the rope tensioning device can wind and unwind the rope easily, conveniently and rapidly.

Rope tensioning device

A rope tension device includes a support base, a drive arm, a movable block, a locking seat, two opposite gears, a push shaft, two rotation shafts, a fixing rod, two first torsion springs, a second torsion spring, a combination bolt, a locking nut, an elastic member, and two insertion pins. Thus, the rope tension device can be operated easily, rapidly and conveniently, thereby facilitating the user operating the rope tension device. In addition, the rope can be released from the first rotation shaft and the second rotation shaft easily and conveniently without needing the manual work to release the rope successively.

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Taichung, Taiwan

Vincent Chang