Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Vincent Calvo

Vincent Reboud

Alexei Tchelnokov

Alban Gassenq

Kevin Guilloy

Jean-Michel Hartmann

Nicolas Pauc

Samuel Tardif

Kévin Guilloy

The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.

Process for producing a strained layer based on germanium-tin

A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

Semiconductor structure including a suspended membrane containing a central segment of structured thickness

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Method of production of a semiconducting structure comprising a strained portion

The invention pertains to formation of a semiconducting portion () by epitaxial growth on a strained germination portion (), comprising the steps in which a cavity () is produced under a structured part () by rendering free a support layer () situated facing the structured part (), a central portion (), termed the strained germination portion, then being strained; and a semiconducting portion () is formed by epitaxial growth on the strained germination portion (), wherein the structured part () is furthermore placed in contact with the support layer () in such a way as to bind the structured part () of the support layer.

Method for forming a semiconducting portion by epitaxial growth on a strained portion

Optical and/or electronic device comprising a suspended, germanium-based membrane () and comprising an active zone () placed under tension by tensioning arms (), said device being characterized in that it comprises at least one tensioning arm () comprising nonparallel lateral sides (), the width of which increases with distance from the active zone ().

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Fontaine, France

Vincent Calvo