Facebook Technologies, LLC

Meta Platforms Technologies, LLC

Oculus, Vr, LLC

Vincent Brennan

Allan Pourchet

Christopher Percival

Patrick Joseph Hughes

William Padraic Henry

Padraig Hughes

Celine Claire Oyer

Joseph O'Keeffe

Tilman Zehender

William Anthony Wall

Andrew John Ouderkirk

Nicholas Daniel Trail

Wanli Chi

Pooya Saketi

James Small

Stephen Warren Gorton

Celine Oyer

A laser light is used to modify the surface of the gallium semiconductor layer of an LED. The parameters of the laser are selected so that the laser interacts with the gallium semiconductor layer in a desired manner to yield the desired surface properties. For example, if a particular surface roughness is desired, the power of the laser light is selected so that the laser light penetrates the gallium semiconductor layer to a depth matching the desired surface roughness. The same principles can also be applied in a process that creates features such as trenches, pits, lenses, and mirrors on the gallium semiconductor layer of an LED. The laser projector is operated to irradiate a region of the gallium semiconductor layer to create a region of metallic gallium. The desired surface roughness and the different features can advantageously improve the beam collimation, light extraction, and other properties of the LED.

LED surface modification with ultraviolet laser

Methods and apparatus () for profiling a beam of a light emitting semiconductor device. The apparatus comprises a light emitting semiconductor device () comprising an active region () formed on a substrate () and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device and a light emitting surface () defined by a lower surface of the substrate opposite the contacts. The apparatus further comprises a transmission medium () comprising a first surface () in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface (), opposite the first surface, and configured to diffuse light emitted from the micro-LED and transmitted through the transmission medium.

Apparatus and method for profiling a beam of a light emitting semiconductor device

A light assembly can have an array of light sources forming rows and columns, where the array comprises a plurality of chips, and each chip comprises a subarray of light sources forming the rows and columns. A boundary between chips in the array can be configured to extend diagonally across rows and columns of the array such that, for each column across which the boundary extends, the first row of the plurality rows may not have a light source disposed in the respective column, but a second row of the plurality of rows has a light source disposed in the respective column.

Scanning display with increased uniformity

Techniques related to eye tracking using reverse-biased light-emitting diode (LED) devices are disclosed. In some embodiments, a viewing apparatus comprises a reverse-biased LED device that is positioned within a field-of-view of an eye. The reverse-biased LED device receives light reflected from the eye and generates signal based on the received light. The generated signal is used to determine a position of the eye.

Eye tracking using reverse-biased light-emitting diode devices

Embodiments relate to transferring dies or other electronic components from a carrier substrate to a target substrate of a device as part of chip assembly for the device. Bonding material is applied to selected dies on a carrier substrate by direct boning, or to corresponding die transfer locations on a target substrate. The carrier substrate is then brought into contact with the target substrate to transfer each of the selected dies to the carrier substrate. Dies can also be directly bonded to the target substrate even in the presence of other die in situ (e.g., from a previous bonding cycle), hence, enables more than one direct bond cycle to be carried out for a target substrate. As such, multi-color (RGB) display elements can be assembled in stages (e.g., separate bonding cycles) in a flexible manner to provide redundancy or to replace inoperative LED dies.

Inorganic light emitting diode (ILED) assembly via direct bonding

A Light emitting diode (LED) includes a mesa structure, a light emitting source within the mesa structure, and a primary emission surface on a side of the LED opposed to a top of the mesa structure. The light emitting source is configured to emit light anisotropically in a first direction perpendicular to a second direction of emission of the light from the LED at the primary emission surface.

Micro-LED device

Methods and apparatus for use in the manufacture of a display device including pixels. Each pixel includes a plurality of sub-pixels, each sub-pixel configured to provide light of a given wavelength. The method may include: performing, using a pick up tool (PUT), a first placement cycle comprising picking up first light emitting diode (LED) dies, and placing a first LED die on a substrate of the display device at a location corresponding to a sub-pixel the display device. The method further includes performing one or more subsequent placement cycles comprising picking up a second LED die, and placing the second LED die on the substrate of the display device at a second location corresponding to the sub-pixel of the display device. Multiple first and second LED dies may be picked and placed during each placement cycle to populate each pixel of the display device to provide redundancy of LED dies at each sub-pixel.

Redundancy in inorganic light emitting diode displays

A micro-LED, &#x3bc;LED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H*H)/Ac, of less than 0.5, and the &#x3bc;LED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.

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Cork, Ireland

Vincent Brennan