Centre National De La Recherche Scientifique

Université Grenoble Alpes

Commissariat a L'energie Atomique

Grapheal

Vincent Bouchiat

Nedjma Bendiab

Laetitia Marty

Dipankar Kalita

Zheng Han

Johann Coraux

Marc Faucher

David Fraboulet

Jacques Gautier

Didier Tonneau

Nicolas Clement

Behnaz Djoharian

Anne-Marie Bonnot

A sensor device including a conductive graphene film covered on at least one side by a graphene support layer of parylene, a detection element configured to sense an environmental change, and an electrode. The parylene repairs some defects of the conductive graphene film without damaging, polluting, or degrading the conductivity of conductive graphene film.

Sensor device formed from conductive graphene film

The disclosure relates to a device for accessing an area with restricted access or an area to which access is controlled, comprising a support, a sensor and access control stage, the support comprising a portion to be discarded and a portion to be retained, the sensor being borne by the portion to be discarded and being configured to measure at least one parameter of a subject's health, and to deliver a detection signal representative of the measurement of each health parameter, the access control stage being borne by the portion to be retained and being configured to store access information dependent on the detection signal delivered by the sensor, the portion to be retained being able to be mechanically separated from the portion to be discarded so as to form an access key allowing, depending on the access information, access or otherwise to the area with restricted access or to the area to which access is controlled.

Portable and single-use device for accessing an area with restricted access, associated access key generation system and associated access control method

The invention concerns a method of forming a medical device, the method comprising: forming a graphene film () over a substrate (); depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (); and removing the substrate () from the graphene film (), wherein the polymer material forms a support () for the graphene film ().

Method of forming a device comprising graphene

The invention concerns a method of forming a graphene device, the method comprising: forming a graphene film () over a substrate; depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (); and removing the substrate from the graphene film (), wherein the polymer material forms a support () for the graphene film ().

Method of forming a graphene device using polymer material as a support for a graphene film

Method of forming a medical device comprising graphene

The invention concerns a transparent heating device comprising: a graphene film fixed to a transparent substrate; a first electrode () connected to a first edge of the graphene film; and a second electrode () connected to a second edge of the graphene film, wherein there is a resistance gradient across the graphene film from the first electrode () to the second electrode ().

Transparent heating device with graphene film

The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

Process and device for forming a graphene layer

The invention relates to a method of growing carbon nanotubes () on a substrate () using a hot-wire-assisted chemical vapor deposition method. The inventive method consists in first depositing a bilayer of titanium () and cobalt () on the substrate such that: the thickness of the titanium layer is between 0.5 and 5 nm, the thickness of the cobalt layer is between 0.25 and 10 nm, and the thickness of the cobalt layer is between half and double that of the titanium layer.

Carbon nanotube growth method

This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps:

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Biviers, France

Vincent Bouchiat