Cirrus Logic Inc.

Vince Deems

Zhonghai Shi

Hong Tian

In accordance with embodiments of the present disclosure, an integrated circuit may include at least one region of shallow-trench isolation field oxide, at least one region of dummy diffusion, and a polycrystalline semiconductor resistor. The at least one region of shallow-trench isolation field oxide may be formed on a semiconductor substrate. The at least one region of dummy diffusion may be formed adjacent to the at least one region of shallow-trench isolation field oxide on the semiconductor substrate. The polycrystalline semiconductor resistor may comprise at least one resistor arm formed with a polycrystalline semiconductor material, wherein the at least one resistor arm is formed over each of the at least one region of shallow-trench isolation field oxide and the at least one region of dummy diffusion.

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Austin, TX, United States of America

Vince Deems