Intel Corporation

Vinaykumar Hadagali

Travis W LaJoie

Bernhard Sell

Pei-Hua Wang

Chieh-Jen Ku

Shem Ogadhoh

Allen B Gardiner

Nikhil Mehta

Gregory George

Akash Garg

Jack T Kavalieros

Tahir Ghani

Van H Le

Abhishek A Sharma

Fatih Hamzaoglu

Juan G Alzate Vinasco

Umut Arslan

Shu Zhou

Abhishek Anil Sharma

Huiying Liu

Jared Stoeger

Julie Rollins

Moshe Dolejsi

Ting Chen

Deepyanti Taneja

Tarannum Tiasha

Yue Liu

Shardul Wadekar

Daniel J Schinke

Vladimir Nikitin

James O'Donnell

An integrated circuit includes a first layer, and a second layer above the first layer. A third layer is between a first section of the first layer and a first section of the second layer. A fourth layer is laterally adjacent to the third layer, the fourth layer between a second section of the first layer and a second section of the second layer. In an example, a first dielectric material of the third layer is different (e.g., one or both of compositionally different and structurally different) from a second dielectric material of the fourth layer. In an example, the third and fourth layers are etch stop layers. In some cases, the third and fourth layers are coplanar with each other with respect to their top surfaces, or their bottom surfaces, or both their top and bottom surfaces.

Hybrid etch stop layers

Embodiments herein describe techniques for a semiconductor device having an interconnect structure including an inter-level dielectric (ILD) layer between a first layer and a second layer of the interconnect structure. The interconnect structure further includes a separation layer within the ILD layer. The ILD layer includes a first area with a first height to extend from a first surface of the ILD layer to a second surface of the ILD layer. The ILD layer further includes a second area with a second height to extend from the first surface of the ILD layer to a surface of the separation layer, where the first height is larger than the second height. Other embodiments may be described and/or claimed.

Intermediate separation layers at the back-end-of-line

An integrated circuit structure comprises one or more backend-of-line (BEOL) interconnects formed over a first ILD layer. An etch stop layer is over the one or more BEOL interconnects, the etch stop layer having a plurality of vias that are in contact with the one or more BEOL interconnects. An array of BEOL thin-film-transistors (TFTs) is over the etch stop layer, wherein adjacent ones of the BEOL TFTs are separated by isolation trench regions. The TFTs are aligned with at least one of the plurality of vias to connect to the one or more BEOL interconnects, wherein each of the BEOL TFTs comprise a bottom gate electrode, a gate dielectric layer over the bottom gate electrode, and an oxide-based semiconductor channel layer over the bottom gate electrode having source and drain regions therein. Contacts are formed over the source and drain regions of each of BEOL TFTs, wherein the contacts have a critical dimension of 35 nm or less, and wherein the BEOL TFTs have an absence of diluted hydro-fluoride (DHF).

Method of contact patterning of thin film transistors for embedded DRAM using a multi-layer hardmask

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Portland, OR, United States of America

Vinaykumar Hadagali