Globalfoundries Singapore Pte. Ltd.

Globalfoundries U.S. Inc.

Vinayak Bharat Naik

Kazutaka Yamane

Eng Huat Toh

Kangho Lee

Hemant M Dixit

Taiebeh Tahmasebi

Chenchen Jacob Wang

Kiok Boone Elgin Quek

Chim Seng Seet

Seungmo Noh

Deepanjan Datta

Eng-Huat Toh

Jia Hao Lim

Murali V R M Kota

Dimitri Houssameddine

Zishan Ali Syed Mohammed

Seidikkurippu Nellainayagam Piramanayagam

Joel Tan

Jian Peng Chan

Structures for a random number generator that include magnetic-tunnel-junction layer stacks and methods of forming such structures. The structure comprises a write line, first and source lines, a first transistor connected by the first source line to a first end of the write line, and a second transistor connected by the second source line to a second end of the write line. The structure further comprises a plurality of magnetic-tunneling-junction layer stacks disposed on the write line between the first and second ends of the write line.

Random number generators including magnetic-tunnel-junction layer stacks

An assembly is provided. The assembly includes a packaged semiconductor device and an outer enclosure enclosing the packaged semiconductor device. The packaged semiconductor device includes at least four opposing sides. The outer enclosure includes a magnetic material and a non-magnetic region arranged adjacent to the at least four opposing sides of the packaged semiconductor device.

Magnetic shielding of semiconductor devices

The present disclosure relates to sensors and, more particularly, to magnetic field sensors. More specifically, a structure includes a package with a wraparound geometry and discontinuous ends, and includes a low permeability magnetic material.

Magnetic field sensor

Structures for a laser-detection device including a magnetic-tunneling-junction layer stack and related methods. The structure has a magnetic-tunneling-junction layer stack including a fixed layer, a free layer, and an insulating spacer between the fixed layer and the free layer, and a power supply coupled to the magnetic-tunneling-junction layer stack. The power supply is configured to bias the magnetic-tunneling-junction layer stack to modulate an energy barrier of the magnetic-tunneling-junction layer stack for switching between a low-resistance state and a high-resistance state in response to receiving incident electromagnetic radiation of an intensity.

Laser-detection devices including a voltage-controlled magnetic-tunneling-junction layer stack

Structures including a magnetic-tunnel-junction layer stack and methods of forming such structures. The structure comprises a magnetic-tunneling-junction layer stack including a reference layer, an antiferromagnetic layer, a free layer positioned between the reference layer and the antiferromagnetic layer, and a tunnel barrier layer positioned between the reference layer and the free layer. The antiferromagnetic layer has a static magnetic field with a magnetization, and the antiferromagnetic layer is antiferromagnetically coupled to the free layer.

Spiking neural network hardware based on magnetic-tunnel-junction layer stacks

The present disclosure relates to integrated circuits, and more particularly, a tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures and methods of manufacture and operation. The structure includes: a first magnetic tunneling junction (MTJ) structure on a first level; a second MTJ structure on a same wiring level as the first MTJ structure; and at least one metal line between the first MTJ structure and the second MTJ structure.

Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures

The present disclosure relates to integrated circuits, and, more particularly, to a magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors, and methods of manufacture and operation. The structure includes: a first portion of a circuit including a first MTJ structure and a first resistor coupled in series between a first voltage source and a second voltage source; and a second portion of the circuit including a second MTJ structure and a second resistor coupled in series between the first voltage source and the second voltage source. The first portion and the second portion are coupled in parallel between the first voltage source and the second voltage source.

Magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors

A magnetic field sensor may include a plurality of MTJ elements. Each MTJ element of has a state indicated by a magnetic moment direction of a sensing layer relative to a pinned, reference layer in an absence of an external magnetic field. The plurality of MTJ elements are arranged into two identical sets of at least two MTJ elements, where each MTJ element in each respective set has a different state. The states of the MTJ elements are arranged in a manner to measure the external magnetic field regardless of the direction of the external magnetic field. The MTJ elements include identical layers, and are electrically serially connected.

Magnetic field sensor with MTJ elements arranged in series

An illustrative memory cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) structure positioned above the bottom electrode and below the top electrode. In this example, the MTJ structure includes a first ferromagnetic material layer positioned above the bottom electrode, a non-magnetic insulation layer positioned above the first ferromagnetic material layer and a second ferromagnetic material layer positioned on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the ferromagnetic material layer.

Memory cell having a free ferromagnetic material layer with a curved, non-planar surface and methods of making such memory cells

The present disclosure relates to integrated circuits, and more particularly, to a highly sensitive tunnel magnetoresistance sensor (TMR) with a Wheatstone bridge for field/position detection in integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: a first magnetic tunneling junction (MTJ) structure on a first device level; and a second magnetic tunneling junction (MTJ) structure on a different device level than the first MTJ structure. The second MTJ structure includes properties different than the first MTJ structure.

Magnetic field sensor using different magnetic tunneling junction (MTJ) structures

One illustrative MRAM cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) element positioned above the bottom electrode and below the top electrode. In this example, the MTJ element includes a bottom insulation layer positioned above the bottom electrode, a top insulation layer positioned above the bottom electrode; and a first ferromagnetic material layer positioned between the bottom insulation layer and the top insulation layer.

MRAM device and methods of making such an MRAM device

Memory cells and method of forming thereof are presented. The method includes forming a magnetic tunnel junction (MTJ) element which includes a fixed magnetic layer, a tunneling barrier layer and a composite free magnetic layer. The composite free magnetic layer includes an insertion layer between first and second free magnetic layers. The insertion layer includes an oxide or oxidized layer. The insertion layer increases the overall thickness of the free layer, decreasing switching current as well as thermal stability. The oxidized layer may be MgO or HfO. A surface layer may be provided over the oxide or oxidized layer to further enhance magnetic anisotropy to further decrease switching current. The surface layer is Ta, Ti or Hf.

Storage layer for magnetic memory with high thermal stability

A magnetic tunneling junction (MTJ) with a free layer that is less temperature sensitive and is reflow compatible at 260&#xb0; C. The magnetic free layer may include various configurations, such as a single as-deposited crystalline magnetic layer or a composite free layer with more than one magnetic layers or a combination of composite and single magnetic layers. The layers of the composite magnetic free layer may include as-deposited crystalline magnetic free layers or a combination of as-deposited crystalline and as-deposited amorphous magnetic layers, with or without a spacer layer. An interface layer may be provided at an interface between the free layer and adjacent layer to apply tensile stress on the free layer in the direction perpendicular to the in-plane direction to enhance perpendicular magnetic anisotropy (PMA) of the free layer.

High energy barrier perpendicular magnetic tunnel junction element with reduced temperature sensitivity

Integrated circuits and methods for fabricating integrated circuits are provided. In one example, an integrated circuit includes a magnetic tunnel junction. The magnetic tunnel junction includes a fixed layer structure, a free layer structure, and a barrier layer disposed between the fixed layer structure and the free layer structure. The fixed layer structure includes a first magnetic layer and a second magnetic layer that is disposed between the first magnetic layer and the barrier layer. The first magnetic layer is configured to produce a first magnetic moment that substantially correlates to a second magnetic moment of the second magnetic layer as a function of temperature.

Integrated circuits with magnetic tunnel junctions and methods for fabricating the same

A bottom pinned perpendicular magnetic tunnel junction (pMTJ) with high TMR which can withstand high temperature back-end-of-line (BEOL) processing is disclosed. The pMTJ includes a composite spacer layer between a SAF layer and a reference layer of the fixed magnetic layer of the pMTJ. The composite spacer layer includes a first non-magnetic (NM) spacer layer, a magnetic (M) spacer layer disposed over the first NM spacer layer and a second NM spacer layer disposed over the M layer. The M layer is a magnetically continuous amorphous layer, which provides a good template for the reference layer.

Growing community of inventors

Singapore, Singapore

Vinayak Bharat Naik