Nuvoton Technology Corporation

Vinay Suresh

Po-An Chen

Vivek Ningaraju

Subramanya Jayasheela Rao

A high-voltage semiconductor device includes a semiconductor substrate having a first conductivity type, a source region and a drain region disposed on the semiconductor substrate. The drain region has a second conductivity type that is the opposite of the first conductivity type, and the source region includes a part having the first conductivity type and another part having the second conductivity type. The device includes a first and a second isolation structures disposed on two opposite sides of the drain region. The first isolation structure is between the source and the drain region. The device includes a first well region disposed below the second isolation structure. The top surface of the first well region is adjacent to the bottom surface of the second isolation structure. In addition, the device includes a first buried layer disposed in the semiconductor substrate and that overlaps the first well region.

High-voltage semiconductor device

A semiconductor device includes a semiconductor substrate having a first conductivity type; a deep well region disposed on the semiconductor substrate, and having a second conductivity type opposite to the first conductivity type; a first well region and a second well region disposed in the deep well region and having the first conductivity type, wherein the first well region and the second well region are separated by a portion of the deep well region, and the first well region is electrically connected to the second well region; and a first doped region and a second doped region disposed in the deep well region and having the second conductivity type, wherein the first well region and the second well region are located between the first doped region and the second doped region.

Semiconductor device

A semiconductor device includes a substrate having a first conductive type. An epitaxial layer having a second conductive type is disposed on the substrate. A first buried layer of the second conductive type is disposed within a high side region of the substrate. A second buried layer of the second conductive type is disposed directly above the first buried layer of the second conductive type. A top surface of the first buried layer of the second conductive type and a top surface of the second buried layer of the second conductive type are apart from a top surface of the epitaxial layer by different distances. A dopant concentration of the first buried layer of the second conductive type is less than that of the second buried layer of the second conductive type.

Semiconductor device and method of fabricating the same

A transient-voltage-suppression (TVS) diode device and a method of fabricating the same are disclosed. The TVS diode device includes a substrate. A second conductivity type first epitaxial layer is disposed over the substrate. A second conductivity type second epitaxial layer is disposed between the second conductivity type first epitaxial layer and the substrate. A plurality of trench isolation features divides the substrate into a first active region including a second conductivity type doped well region disposed in the second conductivity type first epitaxial layer. A first conductivity type doped well region and a first conductivity type buried layer are disposed in the second conductivity type second epitaxial layer. The second conductivity type doped well region and the first conductivity type buried layer collectively form a Zener diode.

Transient-voltage-suppression (TVS) diode device and method of fabricating the same

Provided are a diode, a junction field effect transistor (JFET), and a semiconductor device that have a top doped region. A dopant concentration gradient of the top doped region at one side is different from the dopant concentration gradient of the top doped region at an opposite side. The top doped region is able to increase a breakdown voltage of the device and decrease an on-state resistance (Ron) of the device.

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Bengaluru, India

Vinay Suresh