Gosudarstvenny Nauchno-issledovatelsky I Proektny Institut

Viktor V Myasoedov

Oleg Evgenievich Korobov

Vadim Nikolaevich Maslov

Evgeny V Sinitsyn

Elena S Jurova

Jury V Sokurenko

Elena M Kistova

Izidor K Bronshtein

Natalya I Lukicheva

A semiconductor pressure sensing device comprises a solid made as a AB.sub.1-x C.sub.x semiconductor structure composed of two semiconductor materials AB and AC and a means for measuring variations of electrical resistance of the solid in response to changes of the pressure applied thereto, which is electrically connected to the solid, the semiconductor structure having a first group of layers possessing one value of x and a second group of layers possessing a second value of x and alternating with the layers of the first group.

Semiconductor structure sensitive to pressure

Growing community of inventors

Podolsk, undefined

Viktor V Myasoedov