Lam Research Corporation

Vikrant Rai

James Samuel Sims

Shane Tang

Thorsten B Lill

Meihua Shen

Andrew John McKerrow

Kathryn Merced Kelchner

Alexander Dulkin

John Hoang

Danna Qian

Huatan Qiu

Andrew Mckerrow

A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an Nplasma conversion, and providing an Hplasma conversion.

Method of depositing silicon nitride films

Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

Conformal damage-free encapsulation of chalcogenide materials

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Sherwood, OR, United States of America

Vikrant Rai