Applied Materials, Inc.

Vikram Pavate

Murali K Narasimhan

Seshadri Ramaswami

Jaim Nulman

Glen T Mori

Keith J Hansen

Murali Abburi

Kenny King-Tai Ngan

Xiangbing Li

The present invention generally provides a method and apparatus for forming a doped layer on a substrate to improve uniformity of subsequent deposition thereover. Preferably, the layer is deposited by a sputtering process, such as physical vapor deposition (PVD) or Ionized Metal Plasma (IMP) PVD, using a doped target of conductive material. Preferably, the conductive material, such as copper, is alloyed with a dopant, such as phosphorus, boron, indium, tin, beryllium, or combinations thereof, to improve deposition uniformity of the doped layer over the substrate surface and to reduce oxidation of the conductive material. It is believed that the addition of a dopant, such as phosphorus, stabilizes the conductive material surface, such as a copper surface, and lessens the surface diffusivity of the conductive material. The overall surface diffusivity of copper is reduced such that the tendency to agglomerate or to become discontinuous is reduced, thereby allowing the deposition of a smoother conductive film and thereby reducing localized agglomeration of the conductive material. The smoother film is highly desirable for subsequent deposition processes. A conductive material, such as copper, can be deposited on the deposited doped layer by a variety of processes including PVD, chemical vapor deposition (CVD), electroplating, electroless deposition and other deposition processes.

Method and apparatus of forming a sputtered doped seed layer

The present invention provides a method and apparatus for forming a copper layer on a substrate, preferably using a sputtering process. The sputtering process involves bombarding a conductive member of enhanced hardness with ions to dislodge the copper from the conductive member. The hardness of the target may be enhanced by alloying the copper conductive member with another material and/or mechanically working the material of the conductive member during its manufacturing process in order to improve conductive member and film qualities. The copper may be alloyed with magnesium, zinc, aluminum, iron, nickel, silicon and any combination thereof.

Method of enhancing hardness of sputter deposited copper films

The present invention generally provides a method for stabilizing a halogen-doped silicon oxide film, particularly a fluorinated silicon oxide film. The invention also provides a method for preventing loosely bonded halogen atoms from reacting with components of the barrier layer during subsequent processing of the substrate. The invention provides a hydrogen plasma treatment of the halogen-doped silicon oxide film without subjecting the substrate to a heated environment that may damage the substrate and the structures formed on the substrate. The invention also improves the adhesion strength between the halogen-doped silicon oxide film and the barrier layer. Furthermore, the hydrogen plasma treatment can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, chemical vapor deposition chambers, etch chambers and other plasma processing chambers.

Method of improving adhesion of diffusion layers on fluorinated silicon dioxide

Coils for use within high density plasma chambers are provided that do not electrically disconnect or short circuit following repeated depositions and that produce films having reduced in-film defect densities. To reduce in-film defect densities, dielectric inclusion content, porosity, grain size and surface roughness of a coil are reduced, while the mechanical strength of the coil is increased so as to both decrease defect generation and thermal creep rate (e.g., to prevent electrical disconnection or short circuiting of the coil following repeated depositions).

Coil for sputter deposition

Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomalies

Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target

A copper sputtering target is provided for producing copper films having reduced in-film defect densities. In addition to reducing dielectric inclusion content of the copper target material, the hardness of the copper target is maintained within a range greater than 45 Rockwell. Within this range defect generation from arc-induced mechanical failure is reduced. Preferably hardness is achieved by limiting grain size to less than 50 microns, and most preferably to less than 25 microns. The surface roughness preferably is limited to less than 20 micro inches, or more preferably, less than 5 micro inches to reduce defect generation from field-enhanced emission. This grain size range preferably is achieved by limiting the purity level of the copper target material to a level less than 99.9999%, preferably within a range between 99.995% to 99.9999%, while reducing particular impurity levels.

Copper target for sputter deposition

Improved targets for use in DC.sub.-- magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

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San Jose, CA, United States of America

Vikram Pavate