Texas Instruments Corporation

Vikas I Gupta

Siva Prakash Gurrum

Rongwei Zhang

Sadia Naseem

E Ajith Amerasekera

Daniel Yong Lin

Gregory Eric Howard

Juan Alejandro Herbsommer

Enis Tuncer

Alwin J Tsao

David B Spratt

Timothy Alan Rost

Meysam Moallem

Gregory Charles Baldwin

Jeremias Perez Libres

Stanton Petree Ashburn

Paul Joseph Hundt

Kapil Heramb Sahasrabudhe

Athena Lin

Joseph Edward Grigalunas

Benjamin Stassen Cook

Swaminathan Sankaran

Darvin R Edwards

Hassan Omar Ali

Rajiv Carl Dunne

Michael Todd Wyant

Yong Lin

James Huckabee

Emerson Mamaril Enipin

Patricia Sabran Conde

The disclosed principles provide for implementing low-cost and fast metallic printing processes into the QFN and other no-leads package assembly flow to selectively print solderable material in areas that would otherwise be susceptible to corrosion and thus pose reliability risks. The problem of copper corrosion and poor BLR performance in no-leads packages because of remaining exposed copper areas after package singulation is solved by employing selective metallic printing processes in the assembly flow to coat all risk-prone areas with solder material. For example, for no-leads packages that are formed using printed leadframes, solder can be deposited through inkjet, screen, stencil, or photonic printing into the grooves which are formed after passivating the packages at the strip level. The singulating occurs through the grooves having solder printed therein, and results in wettable upper and sidewall surfaces of the outer ends of the leadframe for each package.

Method for creating a wettable surface for improved reliability in QFN packages

A high frequency wireless device includes a three-dimensional (3D) antenna structure mounted on a PCB including a first antenna connected to a first waveguide feed and second antenna connected to a second waveguide feed. A packaged device on the PCB has a top metal surface including a transmit (Tx) radiating structure under the second waveguide feed and a receive (Rx) radiating structure under the first waveguide feed, and an RF connection from the top metal surface to its bottom surface. An IC die is flipchip attached to the bottom surface including at least one Rx channel and at least one Tx channel connected by the RF connection to the Rx and Tx radiating structures. Protruding metal features are on the dielectric layer under the first and second waveguide feeds on &#x2265;2 sides of the Tx and the Rx radiating structure to create a waveguiding wall structure for directing signals.

Wireless device with waveguiding structures between radiating structures and waveguide feeds

An antenna apparatus in a packaged electronic device includes: an antenna assembly with a conductive antenna, and an insulator; a conductive feed line extending on or in a substrate; a conductive layer with an aperture on or in the substrate between the conductive feed line and an exposed portion of the conductive antenna; and a support structure mounted to a portion of the substrate and to a portion of the antenna assembly to support the antenna assembly and to provide an air gap between the exposed portion of the conductive antenna and the aperture.

Packaged electronic device with integral antenna

Described examples include a sensor device having at least one conductive elongated first pillar positioned on a central pad of a first conductor layer over a semiconductor substrate, the first pillar extending in a first direction normal to a plane of a surface of the first conductor layer. Conductive elongated second pillars are positioned in normal orientation on a second conductor layer over the semiconductor substrate, the conductive elongated second pillars at locations coincident to via openings in the first conductor layer. The second conductor layer is parallel to and spaced from the first conductor layer by at least an insulator layer, the conductive elongated second pillars extending in the first direction through a respective one of the via openings. The at least one conductive elongated first pillar is spaced from surrounding conductive elongated second pillars by gaps.

Semiconductor device for sensing impedance changes in a medium

A packaged semiconductor device includes a lead frame and a semiconductor device. A solder joint is coupled between the lead frame and a terminal on the semiconductor device. A reflow wall is on a portion of the lead frame and is in contact with the solder joint. A molding compound covers portions of the semiconductor device, the lead frame, the solder joint, and the reflow wall.

Packaged semiconductor device with a reflow wall

A device includes a multilayer substrate having a first surface and a second surface opposite the first surface. An integrated circuit is mounted on the second surface of the multilayer substrate, the integrated circuit having transmission circuitry configured to process millimeter wave signals. A substrate waveguide having a substantially solid wall is formed within a portion of the multilayer substrate perpendicular to the first surface. The substrate waveguide has a first end with the wall having an edge exposed on the first surface of the multilayer substrate. A reflector is located in one of the layers of the substrate and is coupled to an edge of the wall on an opposite end of the substrate waveguide.

Substrate design for efficient coupling between a package and a dielectric waveguide

A packaged semiconductor device with a particle roughened surface on a portion of the lead frame that improves adhesion between the molding compound and the lead frame. A packaged semiconductor device with a particle roughened surface on a portion of the lead frame that improves adhesion between the molding compound and the lead frame and with a reflow wall that surrounds a portion of the solder joint that couples the semiconductor device to the lead frame. A packaged semiconductor device with a reflow wall that surrounds a portion of a solder joint that couples a semiconductor device to a lead frame.

Packaged semiconductor device with a particle roughened surface

A leadless integrated circuit (IC) package includes a spaced apart plurality of lead terminals on at least two sides of the leadless IC package, and an IC die including a substrate having at least a semiconductor surface including circuitry coupled to bond pads with the bond pads having bonding features thereon. The bonding features are flip chip bonded to the plurality of lead terminals. Mold compound is above the IC die and between adjacent lead terminals. The lead terminals and the substrate both extend out to have exposed surfaces at edges of the leadless IC package, and the lead terminals also provide a back side bondable contact.

Wafer level derived flip chip package

An antenna-in-package (AiP) device includes a substrate stack having a ceramic substrate attached to an organic substrate, where a dielectric constant of the ceramic substrate is higher than a dielectric constant of the organic substrate. An antenna is on a top side of the ceramic substrate. An integrated circuit (IC) die is flip chip attached to a bottom side of the ceramic substrate or to a top surface of the organic substrate. The IC die includes a radio circuit including at least a transmitter, and there is at least one interconnect for coupling the radio circuit to the antenna.

Antenna in package device having substrate stack

Described examples include a device including a semiconductor die having a first surface with bond pads and an opposite second surface attached to a substrate by an adhesive layer covering at least a portion of the surface area of the second surface. The adhesive layer includes first zones composed of a first polymeric compound and adding up to a first portion of the surface area, and second zones composed of a second polymeric compound and adding up to a second portion of the surface area, the first zones and the second zones being contiguous. The first polymeric compound has a first modulus and the second polymeric compound has a second modulus greater than the first modulus.

Methods and apparatus for a semiconductor device having bi-material die attach layer

A packaged semiconductor device includes a leadframe (LF) having a plurality of laminate-supporting pedestals. A cured first die attach (DA) material is on an outer edge of the pedestals being an ultraviolet (UV)-curing DA material having a photoinitiator or a cured B-stage DA material. A cured thermally-curing DA material is on an area of the pedestals not occupied by the UV-curing DA material. A laminate component having bond pads on a top side is mounted top side up on the plurality of pedestals.

Growing community of inventors

Dallas, TX, United States of America

Vikas I Gupta