Intel Corporation

Vijay Ramachandrarao

Boyan Boyanov

Grant M Kloster

Hyun-Mog Park

Willy Rachmady

Oleg Golonzka

Arnel M Fajardo

A transistor comprises a gate () comprising a gate electrode () and a gate dielectric (), an electrically insulating cap () over the gate, and a source/drain contact () adjacent to the gate. The electrically insulating cap prevents electrical contact between the gate and the source/drain contact. In one embodiment, the electrically insulating cap is formed in a trench () that is self-aligned to the gate and that is created by the removal of a sacrificial cap using an aqueous solution comprising a carboxylic acid and a corrosion inhibitor.

Transistor, method of manufacturing same, etchant for use during manufacture of same, and system containing same

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a dielectric layer utilizing a plasma, wherein the plasma comprises a porogen and substantially no oxidizing agent, and then applying energy to the dielectric layer, wherein the porogen disposed within the dielectric layer decomposes to form at least one pore.

Forming a porous dielectric layer and structures formed thereby

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Hillsboro, OR, United States of America

Vijay Ramachandrarao