Applied Materials, Inc.

Vijay Parihar

Abhilash J Mayur

Dean C Jennings

Bruce E Adams

Aaron Muir Hunter

Joseph Michael Ranish

Mark Yam

Haifan Liang

Kai Ma

Kartik Ramaswamy

Kenneth S Collins

Andrew Nguyen

Hiroji Hanawa

Amir Hamed Al-Bayati

Biagio Gallo

Randhir P S Thakur

Christopher Dennis Bencher

Timothy N Thomas

Marlon E Menezes

Rajesh Kanuri

Kaushal Kishore Singh

Vedapuram S Achutharaman

Srinivas D Nemani

Er-Xuan Ping

Philip Allan Kraus

Robert Jan Visser

Young Seen Lee

Jeffrey C Munro

Dapeng Wang

Ashish Goel

Adam Brand

Ashutosh Agarwal

Faran Nouri

Deepak Jadhav

Sunderraj Thirupapuliyur

Renhe Jia

Tzay-Fa Su

Liming Zhang

Eun-Ha Kim

Aaron Huntern

Haifan Lang

A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Annealing apparatus using two wavelengths of radiation

A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10.6 &#x3bc;m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materials

Annealing apparatus using two wavelengths of laser radiation

Annealing apparatus using two wavelengths of continuous wave laser radiation

A method of processing a substrate having a transparent conductive oxide disposed thereon, including: exposing the substrate to a first cleaning solution comprising hydrogen peroxide and ammonium citrate; exposing the substrate to a second cleaning solution having a pH within a range from about 6 to about 7, the second cleaning solution different than the first cleaning solution; agitating the second cleaning solution; and depositing a silicon-containing film on the transparent conductive oxide.

Cleaning methods for improved photovoltaic module efficiency

Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.

Methods for enhancing light absorption during PV applications

A system for thermal processing of a substrate includes a source of radiation, optics disposed between the source and the substrate to receive light from the source of radiation at the optics proximate end, and a housing holding the optics and having a void inside the housing isolated from light emitted from the source. A light detector is disposed within the void in the housing to detect light from the optics emitted into the housing and send a deterioration signal. The system further includes a power supply for the source of radiation, and a controller to control the power supply based on the deterioration signal from the light detector.

Rapid detection of imminent failure in optical thermal processing of a substrate

A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.

Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants

The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam.

Radiant anneal throughput optimization and thermal history minimization by interlacing

A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

Fast axis beam profile shaping for high power laser diode based annealing system

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Fremont, CA, United States of America

Vijay Parihar