Intel Corporation

Motorola Corporation

Vijay K Nair

Telesphor Kamgaing

Georgios C Dogiamis

Johanna M Swan

Feras Eid

Adel A Elsherbini

Valluri Ramana Rao

Herbert Goronkin

Chuan Hu

Digvijay Ashokkumar Raorane

Shawna M Liff

Yoshihiro Tomita

Javier A Falcon

Thorsten Meyer

Saied N Tehrani

Debabani Choudhury

Larry E Mosley

George N Maracas

Jenn-Hwa Huang

Baris Bicen

Rimantas L Vaitkus

Joel D Birkeland

Songnan Yang

Sasha N Oster

Joseph Staudinger

John Stephen Guzek

Jun Shen

Lakshman Krishnamurthy

Eric Jin Li

Michael Dydyk

Jonathan K Abrokwah

Charles E Weitzel

Pramod Malatkar

Thomas L Sounart

Seong-Youp Suh

Kurt W Eisenbeiser

Kumar Shiralagi

Helen Kankan Pan

Piotr Grodzinski

Majid M Hashemi

Xunhu Dai

Carlton E Hanna

Jeremy W Burdon

Torrey W Frank

Yang Wang

Alexander Essaian

Dale A Hackitt

Sean Gallagher

Nada El-Zein

Robert Marrero

David B Rhine

Barbara Foley Barenburg

Thomas J Smekal

Yuk-Tong Chan

Nada El Zein

Samir El-Ghazaly

Vernon Patrick O'Neil, Ii

Farideh Nikpourian

Helen K Pan

Electronics package device technology is disclosed. In one example, an electronics package device () comprises substrate () supporting an electronics component () and an interconnect via (-) electrically coupled to the electronics component such that at least a portion of the electronics component is disposed between the interconnect via and the substrate. The interconnect via can be directly coupled to the electronics component such that the interconnect via and the electronics component are vertically disposed between a second electronics package device () and the substrate. A second electronics package device can be stacked to the first electronics package device, and can comprise similar architecture of the interconnect via attached to the electronics component as with the first electronics package. Thus, 3D package size is significantly reduced. Associated systems and processes are disclosed.

Architectures and methods of fabricating 3D stacked packages

Generally discussed herein are systems, devices, and methods that include a communication cavity. According to an example a device can include substrate with a first cavity formed therein, first and second antennas exposed in and enclosed by the cavity, and an interconnect structure formed in the substrate, the interconnect structure including alternating conductive material layers and inter-layer dielectric layers.

Die with embedded communication cavity

Enclosure technology for electronic components is disclosed. An enclosure for an electronic component can comprise a base member and a cover member disposed on the base member such that the cover member and the base member form an enclosure for an electronic component. In one aspect, the base member can have at least one via extending therethrough. The at least one via can be configured to electrically couple an enclosed electronic component with another electronic component external to the enclosure. In another aspect, the cover member can include a protrusion, a receptacle, or both, and the base member can include a mating protrusion, receptacle, or both to facilitate proper alignment of the cover member and the base member. Electronic device packages and associated systems and methods are also disclosed.

Enclosure for an electronic component

Packaged RF front end systems including a hybrid filter and an active circuit in a single package are described. In an example, a package includes an active die comprising an acoustic wave resonator. A package substrate is electrically coupled to the active die. A seal frame surrounds the acoustic wave resonator and is attached to the active die and to the package substrate, the seal frame hermetically sealing the acoustic wave resonator in a cavity between the active die and the package substrate.

RF front end module including hybrid filter and active circuits in a single package

Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.

Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric

Embodiments of the invention include a microelectronic device that includes a transceiver coupled to a first substrate and a second substrate coupled to the first substrate. The second substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher. An interposer substrate can provide a spacing between the first and second substrates.

Microelectronic devices designed with efficient partitioning of high frequency communication devices integrated on a package fabric

Embodiments of the invention include a microelectronic device that includes a first silicon based substrate having compound semiconductor components. The microelectronic device also includes a second substrate coupled to the first substrate. The second substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.

Microelectronic devices designed with compound semiconductor devices and integrated on an inter die fabric

Hybrid filters and more particularly filters having acoustic wave resonators (AWRs) and lumped component (LC) resonators and packages therefor are described. In an example, a packaged filter includes a package substrate, the package substrate having a first side and a second side, the second side opposite the first side. A first acoustic wave resonator (AWR) device is coupled to the package substrate, the first AWR device comprising a resonator. A plurality of inductors is in the package substrate.

Hybrid filters and packages therefor

Generally discussed herein are systems, devices, and methods that include a communication cavity. According to an example a device can include a substrate with a first cavity formed therein, first and second antennas exposed in and enclosed by the cavity, and an interconnect structure formed on the substrate, the interconnect structure including alternating conductive material layers and inter-layer dielectric layers.

Embodiments of the invention include an acoustic wave resonator (AWR) module. In an embodiment, the AWR module may include a first AWR substrate and a second AWR substrate affixed to the first AWR substrate. In an embodiment, the first AWR substrate and the second AWR substrate define a hermetically sealed cavity. A first AWR device may be positioned in the cavity and formed on the first AWR substrate, and a second AWR device may be positioned in the cavity and formed on the second AWR substrate. In an embodiment, a center frequency of the first AWR device is different than a center frequency of the second AWR device. In additional embodiment of the invention, the AWR module may be integrated into a hybrid filter. The hybrid filter may include an AWR module and other RF passive devices embedded in a packaging substrate.

Hybrid filter architecture with integrated passives, acoustic wave resonators and hermetically sealed cavities between two resonator dies

An integrated circuit (IC) comprises a substrate, a first die mounted on the substrate, a second die mounted on the substrate and a waveguide structure mounted on the first die and the second die to enable high frequency wireless communication between the first die and the second die.

High frequency waveguide structure

A semiconductor package is described herein with electromagnetic shielding using metal layers and vias. In one example, the package includes a silicon substrate having a front side and a back side, the front side including active circuitry and an array of contacts to attach to a substrate, a metallization layer over the back side of the die to shield active circuitry from interference through the back side, and a plurality of through-silicon vias coupled to the back side metallization at one end and to front side lands of the array of lands at the other end to shield active circuitry from interference through the sides of the die.

Semiconductor package with electromagnetic interference shielding using metal layers and vias

Waveguides disposed in either an interposer layer or directly in the semiconductor package substrate may be used to transfer signals between semiconductor dies coupled to the semiconductor package. For example, inter-semiconductor die communications using mm-wave carrier signals launched into waveguides specifically tuned to optimize transmission parameters of such signals. The use of such high frequencies beneficially provides for reliable transmission of modulated high data rate signals with lower losses than conductive traces and less cross-talk. The use of mm-wave waveguides provides higher data transfer rates per bump for bump-limited dies as well as beneficially providing improved signal integrity even at such higher data transfer rates. Such mm-wave waveguides may be built directly into semiconductor package layers or may be incorporated into one or more interposed layers that are physically and communicably coupled between the semiconductor dies and the semiconductor package substrate.

Substrate dielectric waveguides in semiconductor packages

Embodiments of the invention include a piezoelectric package integrated filtering device that includes a film stack. In one example, the film stack includes a first electrode, a piezoelectric material in contact with the first electrode, and a second electrode in contact with the piezoelectric material. The film stack is suspended with respect to a cavity of an organic substrate having organic material and the film stack generates an acoustic wave to be propagated across the film stack in response to an application of an electrical signal between the first and second electrodes.

Piezoelectric package-integrated film bulk acoustic resonator devices

Growing community of inventors

Mesa, AZ, United States of America

Vijay K Nair