Basf Se Corporation

Vijay Immanuel Raman

Bernd Bruchmann

Sophia Ebert

Christian Schade

Walter Heckmann

Yuzhuo Li

Marc Fricke

Mario Brands

Ilshat Gubaydullin

Shyam Sundar Venkataraman

Maxim Peretolchin

Andreas Klipp

Michael Lauter

Hermann Seyffer

Andreas Greiner

Yongqing Lan

Philipp Zacharias

Carmen-Elena Cimpeanu

Andreas Emge

Frank Rittig

Sheik Ansar Usman Ibrahim

Michel Pepers

Raimund Mellies

Rajan Venkatesh

Anja Song

Evgueni Klimov

Volker Schädler

Kenneth Rushing

Daniel Kwo-Hung Shen

Eason Yu-Shen Su

Karpagavalli Ramji

Cedric Du Fresne Von Hohenesche

Mingjie Zhong

Thomas Steinmacher

Petra Schoecker

Wei Lan William Chiu

Volker Schadler

Antoni Sánchez-Ferrer

Joerg Claussen

Werner Wiegmann

Antonio Sanchez-ferrer

Jürgen Schmidt-Thümmes

Ning Gao

Jörg Claussen

Petra SCHÖCKER

Aleksandar Stoiljkovic

A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, &#x2014;an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(&#x2550;O)(OR1)(OR2) or phosphonic acid (P(&#x2550;O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives

A paper coating slip additive obtainable by free-radical polymerization, its preparation and its use in paper coating compositions are described. The additive is formed from (a) acid monomers selected from ethylenically unsaturated C3 to C8 carboxylic acids, (b) associative monomers of the general formula HC&#x2550;CR&#x2014;COO-(EO)&#x2014;(PO)&#x2014;Rwhere Ris hydrogen or methyl, n is at least two, m is from zero to 50, EO is an ethylene oxide group, PO is a propylene oxide group and Ris a C8-C30 alkyl group or a C8-C30 alkaryl group, and (c) nonionic copolymerizable monomers other than a) and b), wherein said additive has a weight average molecular weight of below 200 000 and wherein tert-dodecyl mercaptan is used as chain transfer agent.

Paper coating slip additive comprising acid monomer, associative monomer and nonionic monomer

Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.

Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices

A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.

Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles

An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for manufacturing electrical, mechanical and optical devices.

Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers

An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, &#x2014;the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, &#x2014;a lower SER than at its start and the same or essentially the same MRR as at its start or&#x2014;a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making use of the said aqueous polishing agent.

Aqueous polishing agent and graft copolymers and their use in a process for polishing patterned and unstructured metal surfaces

Process for the preparation of an aqueous polymer dispersion using RAFT compounds.

Process for the preparation of an aqueous polymer dispersion

An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces

(A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.

Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process

A nanoporous polymer foam having an average pore diameter in the range of from 10 nm to 1000 nm, obtainable by means of a process comprising the following stages:

Nanoporous polymer foams of polycondensation reactive resins

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Mannheim, Germany

Vijay Immanuel Raman