Applied Materials, Inc.

Other

Varian Semiconductor Equipment Associates, Inc.

Vijay D Parkhe

Konstantin Makhratchev

Wendell Glenn Boyd, Jr

Matthew James Busche

Michael Robert Rice

Senh Thach

Zhiqiang Guo

Steven Victor Sansoni

Kartik Ramaswamy

Haitao Wang

Gilbert Hausmann

Douglas A Buchberger, Jr

Phillip R Sommer

Dan A Marohl

Kadthala Ramaya Narendrnath

Chunlei Zhang

Steven E Babayan

Sergio Edelstein

Brad L Mays

Ashutosh Agarwal

Jaeyong Cho

Nitin Khurana

Keith A Miller

Hamid Noorbakhsh

Jason C Della Rosa

Leon Volfovski

Roger Alan Lindley

Reza Sadjadi

Sanjeev Baluja

Shahid Rauf

Shamouil Shamouilian

Tza-Jing Gung

Karl M Brown

Michael D Willwerth

Mingwei Zhu

Ankur Agarwal

Brian T West

Hyman J Levinstein

Daniel Lee Diehl

Shambhu Nath Roy

Benjamin Schwarz

Aihua Chen

Dhritiman Subha Kashyap

Cheng-Hsiung Matthew Tsai

David Benjaminson

Kenneth S Collins

Dmitry Lubomirsky

Zheng Xu

Wei W Wang

Daniel John Hoffman

Philip Allan Kraus

John C Forster

James D Carducci

Anantha K Subramani

Visweswaren Sivaramakrishnan

Todd J Egan

Ananda H Kumar

Kartik Bhupendra Shah

David Walter Groechel

Fusen E Chen

Arnold Kholodenko

Vineet Haresh Mehta

Roderick Craig Mosely

Richard Charles Fovell

Martin Lee Riker

Hari K Ponnekanti

Anand Gupta

Mehmet Tugrul Samir

Ming Xu

Steven C Shannon

Dmitry A Dzilno

Cheng-Hsiung Matt Tsai

Xiaoxiong Yuan

Dennis Stanley Grimard

Gregory Kirk

Alexander M Veytser

John Pipitone

Umesh M Kelkar

Vincent E Burkhart

Glen T Mori

You Wang

David Masayuki Ishikawa

Tejas Ulavi

Stephen Donald Prouty

Christopher L Beaudry

Andreas Schmid

Manjunatha P Koppa

Michael Sterling Jackson

Ashish Goel

Tuochuan Huang

Ashley M Okada

Steven Aihua Chen

Wei Yang

Nety M Krishna

Chandra V Deshpandey

Christopher A Rowland

Wing Lau Cheng

Marc O Schweitzer

Michael G Chafin

Travis Koh

A gas is received through an inlet. A portion of the gas is supplied to an electrostatic chuck. A portion of the gas is re-circulated through a compressor. A pressure of the second portion of the gas is increased. The second portion of the gas is stored in a gas storage.

Increasing the gas efficiency for an electrostatic chuck

Implementations described herein provide a substrate support assembly which enables temperature uniformity across a workpiece surface. In one embodiment, a substrate support assembly is provided that includes a body. The body made from ceramic. The body having a workpiece support surface and a mounting surface. The workpiece support surface and the bonding chuck body surface having a flatness of less than 10 microns. A first heater is disposed on the bottom surface outside the body. A bonding layer is disposed over the first heater, wherein the bonding layer is electrically insulating and a cooling base having a body made from a metal. The cooling body having an upper cooling body surface and a lower cooling body surface wherein the upper cooling body surface is less than about 10 microns flat.

Extreme uniformity heated substrate support assembly

Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface. The support assemblies includes a support stem coupled with the electrostatic chuck body. The support assemblies includes an electrode embedded within the electrostatic chuck body proximate the substrate support surface. The support assemblies includes a ground electrode embedded within the electrostatic chuck body. The support assemblies includes one or more channels formed within the electrostatic chuck body between the electrode and the ground electrode.

Semiconductor substrate support with internal channels

An electrostatic chuck assembly includes a first puck plate including one or more first functional elements, a second puck plate including one or more second functional elements, and an interface layer at least partially bonding the first puck plate and the second puck plate.

Modular substrate support assembly

A device includes a first plate including a first dielectric material and having a first set of electrodes embedded therein, a second plate including a second dielectric material and having a second set of electrodes embedded therein, and an inorganic dielectric bond including an inorganic dielectric material disposed between the first plate and the second plate. The first plate and the second plate are disposed on a base structure.

Fabrication of substrate support devices using inorganic dielectric bonding

Embodiments of the present disclosure generally relate to an electrostatic chuck assembly suitable for use in cryogenic applications. In one or more embodiments, an electrostatic chuck assembly is provided and includes an electrostatic chuck having a substrate supporting surface opposite a bottom surface, a cooling plate having a top surface, where the cooling plate contains an aluminum alloy having a coefficient of thermal expansion (CTE) of less than 22 ppm/° C., and a bonding layer securing the bottom surface of the electrostatic chuck and the top surface of the cooling plate.

Electrostatic chuck assembly for cryogenic applications

A substrate support assembly is described herein that includes a facility plate, a ground plate coupled to the facility plate, a fluid conduit disposed within the substrate support assembly disposed through the facility plate and the ground plate, and a connector coupled to the ground plate that houses a portion of the fluid conduit. The connector includes a biasing assembly and a fastener disposed in a pocket formed in the ground plate.

Cooled substrate support assembly for radio frequency environments

Embodiments of the present disclosure generally relate to a cryogenic micro-zone connection assembly for a substrate support assembly suitable for use in cryogenic applications. In one or more embodiments, the cryogenic micro-zone connection assembly has a first end having a micro-zone connector. A second end has a socket connection. A flange is disposed between the micro-zone connector and the socket connection. And a wiring harness is coupled at the first end to the micro-zone connector, extends through the flange and is coupled at the second end to the socket connection.

Cryogenic micro-zone electrostatic chuck connector assembly

Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heating assembly. The substrate support assembly comprises a body having a substrate support surface and a lower surface, one or more main resistive heaters disposed in the body, a plurality of spatially tunable heaters disposed in the body, and a spatially tunable heater controller coupled to the plurality of spatially tunable heaters, the spatially tunable heater controller configured to independently control an output one of the plurality of spatially tunable heaters relative to another of the plurality of spatially tunable heaters.

Tunable temperature controlled substrate support assembly

Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heater assembly. The substrate support assembly comprises an upper surface and a lower surface; one or more main resistive heaters disposed in the substrate support; and a plurality of heaters in column with the main resistive heaters and disposed in the substrate support. A quantity of the heaters is an order of magnitude greater than a quantity of the main resistive heaters and the heaters are independently controllable relative to each other as well as the main resistive heater.

Temperature controlled substrate support assembly

Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic top plate having a top surface with a processing region. One or more electrodes is within the ceramic top plate. A plurality of mesas is within the processing region and on the top surface of the ceramic plate or vertically over an edge of one of the one or more electrodes.

Electrostatic chuck with mesas

Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.

Ground electrode formed in an electrostatic chuck for a plasma processing chamber

Embodiments of a substrate carrier are provided herein. In some embodiments, a substrate carrier includes a base plate, wherein the base plate is a thin, solid plate with no through holes or embedded components; and a plurality of raised portions extending from the base plate, wherein the plurality of raised portions include first raised portions and second raised portions, the first raised portions disposed radially inward from the second raised portions, wherein the base plate and the plurality of raised portions define pockets configured to retain a plurality of substrates, and wherein an upper surface of the second raised portions have a greater surface area than an upper surface of the first raised portions.

Substrate carrier

Exemplary substrate support assemblies may include an electrostatic chuck body. The body may include a support plate defining a substrate support surface. The body may include a base plate coupled with the support plate. A bottom surface of the base plate may define an annular recess. The body may include a cooling plate coupled with the base plate. The assemblies may include a support stem coupled with the body. The assemblies may include a heater embedded within the body. The assemblies may include one or more electrodes embedded within the body. The assemblies may include an annular plate disposed within the annular recess. The annular plate may have a thermal conductivity of less than about 20 W/mK. The assemblies may include a vacuum sealing element disposed between the annular plate and the cooling plate. The assemblies may include a thermal gasket disposed radially inward of the vacuum sealing element.

Vacuum seal for electrostatic chuck

Embodiments described herein generally relate to porous plugs having sealing layers for use in substrate support pedestals and methods for forming the same. In one or more embodiments, the sealing layer can be formed in-situ by applying a fluoroelastomer composition to at least one of the porous plug and the walls of a cavity of an electrostatic chuck. The fluoroelastomer composition can be cured in-situ to form the sealing layer between the porous plug and the wall of the cavity. The porous plug is positioned within the cavity to control the flow of gas through a gas flow passage. The sealing layer is positioned adjacent to the porous plug and is capable of forming one or more of a radial seal between the porous plug and the wall of the cavity and an axial seal between the porous plug and a cooling base.

Porous plug bonding

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San Jose, CA, United States of America

Vijay D Parkhe