Applied Materials, Inc.

Other

Vijay Bhan Sharma

Visweswaren Sivaramakrishnan

Ankur Kadam

Abhijeet Laxman Sangle

Yuan Xue

Bharatwaj Ramakrishnan

Prerna Sonthalia Goradia

Tapash Chakraborty

Laksheswar Kalita

Balaji Ganapathy

Venkata Ramana Kondiboyina

Nilesh Patil

A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.

Pulsed DC power for deposition of film

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

Physical vapor deposition of piezoelectric films

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400&#xb0; C., and thermally annealing the substrate at a temperature above 500&#xb0; C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.

Uniform crack-free aluminum deposition by two step aluminum electroplating process

There is provided a method and kit for rapid clinical diagnosis of HBV in which the amplimers are transcripts of a pre-core or envelop region gene of HBV. The amplicons are hybridized to a specific oligonucleotide probe, which allows the amplicons to be detected.

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Mumbai, India

Vijay Bhan Sharma