Samsung Electronics Co., Ltd.

Vietha Nguyen

Wookyung You

Byunghee Kim

Jongmin Baek

Naein Lee

Sanghoon Ahn

Jiwon Kang

Woo Jin Lee

Jong Min Baek

Byung-Kwon Cho

Byung Hee Kim

Woo Kyung You

Hak-Sun Lee

Kyu Hee Han

Nae In Lee

Sang Shin Jang

YoungWoo Cho

Songyi Han

Eun Ji Jung

Jiwon Yun

Young-ju Park

Inoue Naoya

Woojin Lee

Sang-Hoon Ahn

Kyu-Hee Han

Jong-Min Baek

Deok-Young Jung

Sang Hoon Ahn

Hyunbae Lee

Hyeok-Sang Oh

Woo-Kyung You

Doo-Sung Yun

Thomas Oszinda

Hoon-Seok Seo

Sung-Jin Kang

Eui-Bok Lee

Sangshin Jang

Sang-Shin Jang

Seungyong Yoo

Hoyun Jeon

Provided herein is a method of forming micropatterns, including: forming an etching target film on a substrate; forming a photosensitivity assisting layer on the etching target film, the photosensitivity assisting layer being terminated with a hydrophilic group; forming an adhesive layer on the photosensitivity assisting layer, the adhesive layer forming a covalent bond with the hydrophilic group; forming a hydrophobic photoresist film on the adhesive layer; and patterning the photoresist film.

Methods of forming micropatterns and substrate processing apparatus

A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.

Semiconductor devices and methods of manufacturing the same

A method of manufacturing the semiconductor device includes providing a first interlayer dielectric layer having a conductive pattern, sequentially forming a first etch stop layer, a second etch stop layer, a second interlayer dielectric layer and a mask pattern on the first interlayer dielectric layer, forming an opening in the second interlayer dielectric layer using the mask pattern as a mask, the opening exposing the second etch stop layer, and performing an etching process including simultaneously removing the mask pattern and the second etch stop layer exposed by the opening to expose the first etch stop layer.

Method of manufacturing semiconductor device using a plurality of etch stop layers

A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

Planarized interlayer dielectric with air gap isolation

A semiconductor device comprises a lower structure on a substrate and including a recess region, first and second barrier layers covering an inner surface of the recess region and a top surface of the lower structure, the inner surface of the recess region including a bottom surface and an inner sidewall connecting the bottom surface to the top surface of the lower structure, and an interlayer dielectric layer provided on the second barrier layer and defining an air gap in the recess region. A first step coverage is obtained by dividing a thickness of the first barrier layer on an inner sidewall of the recess region by a thickness of the first barrier layer on the top surface of the lower structure. A second step coverage is obtained by dividing a thickness of the second barrier layer on the inner sidewall of the recess region by a thickness of the second barrier layer on the top surface of the lower structure. The first step coverage is different from the second step coverage.

Semiconductor device including air-gap

A semiconductor device may include a substrate, a first interlayered insulating layer on the substrate having openings, conductive patterns provided in the openings, first to fourth insulating patterns stacked on the substrate provided with the conductive patterns, and a second interlayered insulating layer provided on the fourth insulating pattern.

Semiconductor devices

Growing community of inventors

Yongin-si, South Korea

Vietha Nguyen