Silicon Storage Technology, Inc.

Viet Tan Nguyen

Hieu Van Tran

Thuan Vu

Anh Ly

Hung Quoc Nguyen

A circuit and method are disclosed for operating a non-volatile memory device, comprising time sampling a reference current or voltage in a floating holding node to obtain a hold voltage and applying the hold voltage in sensing circuitry.

Sensing circuit with sampled reference current or voltage for flash memory system

The present invention relates to a circuit and method for low power operation in a flash memory system. In disclosed embodiments of a selection-decoding circuit path, pull-up and pull-down circuits are used to save values at certain output nodes during a power save or shut down modes, which allows the main power source to be shut down while still maintaining the values.

Growing community of inventors

Ho Chi Minh, Vietnam

Viet Tan Nguyen