Nxp B.v.

Sciosense B.v.

Koninklijke Philips Corporation N.v.

Ams International Ag

Ams Ag

Viet Nguyen Hoang

Radu Surdeanu

Benoit Bataillou

Pascal Bancken

David Van Steenwinckel

Roel Daamen

Dimitri Soccol

Romano Julma Oscar Maria Hoofman

Pierre Hermanus Woerlee

Gian Hoogzaad

Peter Hubertus Franciscus Deurenberg

Aurelie Humbert

Greja Johanna Adriana Maria Verheijden

Gert-Jan Koolen

Martinus Theodorus Bennebroek

Julien M M Michelon

Greja J A M Verheijden

Phillip Christie

Dirk Jan Gravesteijn

Albert Jan Hof

Herma Van Kranenburg

In an embodiment a method includes determining, for each capacitor element of a plurality of capacitor elements of a capacitor, an increase of a capacitance of a capacitor element caused by a decrease of a temperature of the capacitor and deriving a dew point from a temperature at which the increases of the capacitances or values corresponding to the increases of the capacitances exceed a predefined limit by generating a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range, comparing sets of binary digits generated at different temperatures and determining a number of capacitor elements for which the corresponding binary digits of the sets are different and repeating the comparison for a sequence of sets generated at decreasing temperatures.

CMOS compatible dew point sensor device and method of determining a dew point

In an embodiment a dew point sensor device includes a semiconductor substrate, a top layer arranged on the semiconductor substrate, a Peltier element integrated in the semiconductor substrate, a temperature sensor, a capacitor arranged at a surface of the top layer facing away from the semiconductor substrate, the temperature sensor and the capacitor being arranged so that a temperature of the capacitor is measurable by the temperature sensor, wherein the capacitor includes a plurality of capacitor elements each having a capacitance, and an electronic circuit configured for an individual determination of the capacitances and a generation of a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range.

CMOS-compatible dew point sensor device and method of determining a dew point

An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.

Integrated circuit comprising a gas sensor

A light sensor device comprises a substrate () having a well () defined in one surface. At least one light sensor () is formed at the base of the well (), and an optical light guide () in the form of a transparent tunnel () within an opaque body () extends from a top surface of the device down a sloped side wall of the well () to the location of the light sensor ().

Light sensor device and manufacturing method

A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.

Display device

A method of determining the dominant output wavelength of an LED, includes determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analyzing the characteristic to determine the dominant output wavelength.

Lighting unit with compensation for output frequency, and method for determining output frequency

A method of providing a dielectric material () having regions () with a varying thickness in an IC manufacturing process is disclosed. The method comprises forming a plurality of patterns in respective regions () of the dielectric material (), each pattern increasing the susceptibility of the dielectric material () to a dielectric material removal step by a predefined amount and exposing the dielectric material () to the dielectric material removal step. In an embodiment, the IC comprises a plurality of pixilated elements () and a plurality of light interference elements (), each comprising a first mirror element () and a second mirror element (), a region of the dielectric material () separating the first mirror element () and the second element (), and each being arranged over one of said pixilated elements (), the method further comprising forming the respective first mirror elements () in a dielectric layer () over a substrate () comprising the plurality of pixilated elements; depositing the dielectric material over the dielectric layer; and forming the respective second mirror elements such that each second mirror element is separated from a respective first mirror element by a region of the exposed dielectric material. Hence, an IC having a layer of a dielectric material () comprising regions of different thicknesses can be obtained requiring only a few process steps.

Integrated circuit manufacturing method

A method is disclosed of controlling a LED, comprising driving the LED with a DC current for a first time, interrupting the DC current for a second time such that the first time and the second time sum to a period, determining at least one characteristic of the LED while the DC current is interrupted, and controlling the DC current during a subsequent period in dependence on the at least one characteristic. The invention thus benefits from the simplicity of DC operation. By operating at the LED in a DC mode, rather than say in a PWM mode, the requirement to be able to adjust the duty cycle is avoided. By including interruptions to the DC current, it is possible to utilize the LED itself to act as a sensor in order to determine a characteristic of the LED. The need for additional sensors is thereby avoided.

Method of controlling an LED, and an LED controller

A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (I, l), the high current value (l) comprising an LED operation current, and the low current value (I) comprising a non-zero measurement current. The forward bias voltage drop (Vf) is sampled and the forward bias voltage drop (Vf) is determined at the measurement current (I)&#x2014;The temperature is derived from the determined forward bias voltage drop.

System and method for estimating the junction temperature of a light emitting diode

A method of estimating the output light flux of a light emitting diode, comprises applying a drive current waveform to the LED over a period of time comprising a testing period. The forward voltage across the LED is monitored during the testing period, and the output light flux is estimated as a function of changes in the forward voltage.

System and method for output flux measurement of light emitting diode

The present invention relates to a luminescent component () and a manufacturing method thereof. The luminescent component () comprises a first transparent carrier (), a second transparent carrier (), a substrate () sandwiched between said transparent carriers (), the substrate () comprising a conduit from the first transparent layer () to the second transparent carrier (), the conduit being filled with a luminescent solution (). This facilitates the use of colloidal solutions of quantum dots in such a luminescent component (). Preferably, the substrate () is direct bonded to the transparent carriers () using direct wafer bonding techniques.

Luminescent component and manufacturing method

The present invention relates to a manufacturing method of an integrated circuit (IC) comprising a substrate () comprising a pixelated element () and a light path () to the pixelated element (). The IC comprises a first dielectric layer () covering the substrate () but not the pixilated element (), a first metal layer () covering a part of the first dielectric layer (), a second dielectric layer () covering a further part of first dielectric layer (), a second metal layer () covering a part of the second dielectric layer () and extending over the pixelated element () and a part of the first metal layer (), the first metal layer () and the second metal layer () forming an air-filled light path () to the pixelated element (). The air-filled light path () is formed by creation of holes in the first dielectric layer () and the second dielectric layer (), filling the holes with sacrificial materials, and removal of the sacrificial materials after deposition and patterning of the second metal layer (). This yields an IC having a low-loss light path to the pixelated element (). The light path may act as a color filter, e.g. a Fabry-Perot color filter.

Manufacturing method and integrated circuit having a light path to a pixilated element

An apparatus comprising at least one measuring cell () is disclosed. The measuring cell comprises a first cavity (and a second cavity () perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface () at the opposite respective ends. A beam splitter () is located in the overlap and an electromagnetic radiation source () is arranged to project a beam of electromagnetic radiation onto the beam splitter () such that the beam is projected into each of the cavities. A phase detector () for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity () is also provided. In addition, the apparatus has a fluid channel (), at least a part of which runs parallel to the first cavity () such that the electromagnetic radiation projected into the first cavity extends into said part of the fluid channel. This allows for the interferometric detection of particles in the fluid channel.

Measuring apparatus

The present invention relates to a method for fabrication of in-laid metal interconnects. The method comprises the steps of providing a substrate with a dielectric material on top thereof, depositing a protection layer on top of the dielectric material, depositing a sacrificial layer on top of the protection layer, the sacrificial layer having a mechanical strength that is lower than the mechanical strength of the protection layer, making an opening) through the sacrificial layer, through the protection layer and into the dielectric material, depositing a barrier layer in the opening and on the sacrificial layer, depositing metal material on the barrier layer, the metal material filling the opening, removing portions of the metal material existing beyond the opening by means of polishing, and removing the barrier layer and the sacrificial layer in one polishing step.

Method for fabrication of in-laid metal interconnects

The present invention relates to a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element, wherein respective forward voltages at junctions of the semiconductor element and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensor, and the junction temperature of the semiconductor element is predicted based on the absolute ambient temperature and the measured forward voltages.

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Leuven, Belgium

Viet Nguyen Hoang