Samsung Electronics Co., Ltd.

Viet Ha Nguyen

Jong Min Baek

Byung Hee Kim

Byung-Hee Kim

Kyu-Hee Han

Jong-Min Baek

Woo Kyung You

Kyu Hee Han

Woo-Kyung You

Sang Shin Jang

Sang-Shin Jang

Thomas Oszinda

Nae In Lee

Tae Jin Yim

A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

Semiconductor device and method for fabricating the same

A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

Methods of manufacturing semiconductor devices

Semiconductor device with air gap between wires and method for fabricating the same

Semiconductor devices and methods of manufacturing the same

Methods for fabricating semiconductor devices may provide enhanced performance and reliability by recovering quality of a low-k insulating film damaged by a plasma process. A method may include forming a first interlayer insulating film having a trench therein on a substrate, filling at least a portion of the trench with a metal wiring region, exposing a surface of the metal wiring region and a surface of the first interlayer insulating film to a plasma in a first surface treatment process, then exposing the surface of the first interlayer insulating film to a recovery gas containing a methyl group (&#x2014;CH) in a second surface treatment process, and then forming an etch stop layer on the metal wiring region and the first interlayer insulating film.

Methods for fabricating semiconductor devices including surface treatment processes

Growing community of inventors

Yongin-si, South Korea

Viet Ha Nguyen