Intel Corporation

Victor Zia

Vivek K De

James W Tschanz

Siva G Narendra

Badarinath N Kommandur

Stephen H Tang

Christopher P Mozak

Ming Lei Zhang

Robert F Kwasnick

Joseph Shor

Tak Ming Mak

Samie B Samaan

Subhasish Mitra

Michael J Tripp

Arman Vassighi

Huy Le

Mona Mayeh

Gabriel J Thompson

Described is an apparatus which comprises: a first array of reliability monitors including first and second reliability monitors, wherein the first and second reliability monitors include first and second switches and first and second conductors, wherein the first and second switches are coupled to first and second conductors, respectively; and first and second comparators coupled to the first and second switches, respectively. Described is an apparatus which comprises: a conductor formed on a metal layer; a switch having a source terminal coupled to the conductor, and a drain terminal coupled to a power supply node, wherein the switch is controllable by a controller; and a comparator having a first input coupled to the power supply node and to the switch, wherein the comparator includes a second input coupled to an adjustable reference.

Apparatus and method for monitoring and predicting reliability of an integrated circuit

Some embodiments include apparatus and methods using a first transistor coupled between a node and a supply node, a second transistor coupled between the node and a ground node, an electrostatic discharge (ESD) protection unit including a diode coupled between the node and an additional node, and a transistor coupled between the additional node and the supply node.

On-die system electrostatic discharge protection

A method includes performing a burn-in test on an integrated circuit (IC) by removing power from a first component block within the IC and applying a maximum burn-in voltage and temperature to a second component block within the IC.

Sequential burn-in test mechanism

Described herein are a method, apparatus, and system for electrostatic discharge protection of supplies. The apparatus comprises a timer unit having a node with a first supply signal and operable to generate a first timer signal based on the first supply signal; and a clamp unit, coupled to the timer unit and having a node with a second supply signal, operable to clamp the second supply signal in response to electrostatic discharge (ESD) on the node with the second supply signal for a duration based on a signal level of the first timer signal.

Method, apparatus, and system for protecting supply nodes from electrostatic discharge

A method, apparatus, article of manufacture, and system, the method including, in some embodiments, performing an in-system (or in-the-field) self-test on a first core of a multi-core (or multi-CPU) processor to obtain at a value for at least one operational parameter of the first core, storing the value for the at least one operational parameter of the first core, testing, under control of the first core, at least one of a remaining set of cores of the multi-core processor to determine a value for the at least one operational parameter for the at least one core of the remaining set of cores, and testing, under control of the at least one core of the remaining set of cores, the first core to determine a value for the at least one operational parameter for the first core.

Method and system to self-test single and multi-core CPU systems

A system may include detection of a direction of transistor body current flow, and control of a regulator transistor to regulate a transistor body voltage based on the detected direction. In some aspects, a first regulator transistor is controlled if the direction of current flow is into a transistor body and a second regulator transistor is controlled if the direction of current flow is out of the transistor body.

Bidirectional body bias regulation

In one embodiment, an apparatus is provided with a system circuit, a scanout circuit and an error detecting circuit. The system circuit is adapted to generate a first output signal in response to a data input signal and a system clock signal. The scanout circuit is adapted to generate a second output signal in response the data input signal and the system clock signal. The error detecting circuit, coupled to the system circuit and the scanout circuit, is adapted to generate an error signal in response to a relative condition between the first output signal and the second output signal.

System and scanout circuits with error resilience circuit

A bias generator is provided that includes a central bias generator to provide a first bias voltage and a local bias generator to receive the first bias voltage and to provide a second bias voltage. The central bias generator may include a replica bias generator circuit substantially corresponding to the local bias generator.

Bias generator for body bias

A bias generator unit is provided that includes a central bias generator to provide a bias voltage, a local bias generator to receive the bias voltage and a reference voltage and to provide a forward body bias signal or a reverse body bias signal. The bias generator may include a charge pump to output (or provide) a reference voltage to a reference generator, which in turn provides reference signals to the central bias generator. As a result, the local bias generator may control the body bias signal provided by the local bias generator.

In some embodiments, a method includes providing an integrated circuit (IC) die in a package. The IC die may have a metal layer on a back surface of the IC die. The method may also include applying a bias signal to the IC die via the metal layer.

Growing community of inventors

Beaverton, OR, United States of America

Victor Zia