University of California

Georgia Tech Research Corporation

Wayne State University

Victor Wang

Andrew C Kummel

Charles H Winter

Muhannad S Bakir

Jonathan Hollin

Ming-Jui Li

Michael Breeden

Nyi Myat Khine Linn

Mike Breeden

Provided by the inventive concept are methods for fabricating semiconductor devices, such as methods of atomic layer deposition (ALD). Aspects of the inventive concept include methods for depositing and forming Ru metal layers having low resistivity, forming Ru metal layers without the need for a post-deposition annealing step, forming Ru metal layers selectively on portions of a substrate without the need for passivation, and providing Ru metal layers for use in back end of the line (BEOL) applications in semiconductor devices that do not require a liner/barrier layer.

Methods of performing selective low resistivity Ru atomic layer deposition and interconnect formed using the same

Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.

Methods of forming stacked integrated circuits using selective thermal atomic layer deposition on conductive contacts and structures formed using the same

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La Jolla, CA, United States of America

Victor Wang