Ams Ag

Victor Sidorov

Eugene G Dierschke

Jochen Kraft

Jong Mun Park

Georg Parteder

Stefan Jessenig

Martin Sagmeister

The chemical sensing device comprises a substrate of semiconductor material, integrated circuit components and a photodetector formed in the substrate, a dielectric on the substrate, a wiring in the dielectric, and a source of electromagnetic radiation, a waveguide and a fluorescent sensor layer arranged in or above the dielectric. A portion of the waveguide is arranged to allow the electromagnetic radiation emitted by the source of electromagnetic radiation to be coupled into the waveguide. A further portion of the waveguide is arranged between the photodetector and the fluorescent sensor layer.

Chemical sensing device using fluorescent sensing material

A dielectric layer is arranged on a main surface of a semiconductor substrate, a metal layer providing a contact area is embedded in the dielectric layer, a top metal is arranged on an opposite main surface of the substrate, and an electrically conductive interconnection through the substrate, which comprises a plurality of metallizations arranged in a plurality of via holes, connects the contact area with the top metal. The plurality of metallizations is surrounded by an insulating layer penetrating the substrate.

Semiconductor device with through-substrate via and its method of manufacture

The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e, hgenerated by radiation that is incident from a rear side opposite the photodetectors.

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Premstaetten, Austria

Victor Sidorov