Microchip Technology Inc.

Microsemi Soc Corporation

Victor Nguyen

John L McCollum

Fethi Dhaoui

Fengliang Xue

Volker Hecht

Pavan Singaraju

A ReRAM memory array includes ReRAM memory cells having two series-connected select transistors connected in series with a ReRAM device. When ReRAM memory cell(s) are selected for erasing, the bit line coupled to the ReRAM memory cell(s) to be erased is biased at a first voltage potential. The source line coupled to the ReRAM memory cell(s) to be erased is biased at a second voltage potential greater than the first voltage potential, the difference between the first voltage potential and the second voltage potential being sufficient to erase the ReRAM device. The gates of the series-connected select transistors of the ReRAM memory cell(s) to be erased are supplied with positive voltage pulses. The gates of the series-connected select transistors of the ReRAM memory cell(s) unselected for erasing are supplied with a voltage potential insufficient to turn them on.

ReRAM memory array that includes ReRAM memory cells having a ReRAM device and two series-connected select transistors that can be selected for erasing

An apparatus may include a first inverter and a second inverter cross-coupled between a first node and a second node to store a signal state represented by complementary voltages at the first node and the second node. The apparatus may further include a first path defined by the second inverter that includes an impedance element to resist a flow of charge suitable to change the signal state. The apparatus may further include the first inverter and a third inverter selectively cross-coupled between the first node and the second node to store a received signal state represented by the complementary voltages at the first node and the second node responsive to an assertion of a write enable signal.

Selectively cross-coupled inverters, and related devices, systems, and methods

A method for erasing a ReRAM memory cell that includes a ReRAM device having a select circuit with two series-connected select transistors. The method includes determining if the ReRAM cell is selected for erasing. If the ReRAM cell is selected for erasing, the bit line node is biased at a first voltage potential, the source line node is biased at a second voltage potential greater than the first voltage potential and the gates of the series-connected select transistors are supplied with positive voltage pulses. The difference between the first voltage potential and the second voltage potential is sufficient to erase the ReRAM device in the ReRAM cell. If the ReRAM cell is unselected for erasing, the gate of the one of the series-connected select transistors having its drain connected to an electrode of the ReRAM device is supplied with a voltage potential insufficient to turn it on.

Method for erasing a ReRAM memory cell

A single-event-upset (SEU) stabilized memory cell includes a latch portion including a cross-coupled latch, and at least one cross coupling circuit path in the latch portion including a first series-connected pair of vertical resistors.

SEU stabilized memory cells

A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a select circuit including two series-connected select transistors connected in series with the ReRAM device, each of the two series-connected select transistors having a gate connected to a separate control line.

ReRAM memory cell having dual word line control

A method for programming a resistive random-access memory (ReRAM) cell includes passing a first current through the ReRAM device for a first period of time, the first current selected to create a leakage path through the ReRAM device, and after passing the first current through the ReRAM device passing a second current through the ReRAM device for a second period of time shorter than the first period of time, the second current selected to create a current path having a desired resistance through the leakage path through the ReRAM device.

Growing community of inventors

San Ramon, CA, United States of America

Victor Nguyen