Xerox Corporation

Victor M Da Costa

Patrick A O'Connell

An integrated thin film electrographic writing head. The writing head has integrated therein a plurality of marking electrodes or nibs arranged in a linear array for writing onto a medium, and a plurality of high voltage driving circuits for driving the nibs. The write head also includes a plurality of latches each connected to the high voltage driving circuits, a plurality of memory cells each connected to the latches, a plurality of buffers, each buffer supplying a select line to the plurality of memory cells, and a plurality of selection elements, supplying a selection signal to each of the buffers to drive a segment of memory cells. The integrated memory means and latching means allow for simultaneous latching and writing of an entire scanline of data.

Integrated thin film transistor electrographic writing head

An improved shift register assembly having an integrated multi-phased dynamic shift register with a corresponding multi-phased driving buffer for addressing elements of an array. The shift register and buffer combination is used to select segments on the array having a common select line thus reducing the number of input lines needed to address such an array. Furthermore, the multi-phased operation of the shift register allows for faster operation than tyhat of a traditional shift register setup.

Parallel multi-phased a-Si shift register for fast addressing of an a-Si

A leaky thin film transistor including a charge transport layer, source and drain electrodes located adjacent to the charge transport layer, a gate electrode spaced from the charge transport layer by a gate dielectric layer, the gate electrode defining a gated portion of the charge transport layer extending between the source electrode and the drain electrode, and an ungated portion of the charge transport layer extending between the source and drain electrodes and providing an electrical path for leakage current to flow between the source and drain electrodes in parallel with the gated path between the source and drain electrodes.

Leaky low voltage thin film transistor

A cascode circuit for switching a high voltage thin film transistor substantially over its entire high voltage range, comprising a leaky low voltage thin film transistor connected in series with the high voltage thin film transistor, the transistors being connected between a source of high potential and a source of reference potential, and the leaky low voltage thin film transistor includes a space charge limited current shunt connected in parallel with the low voltage thin film transistor.

Growing community of inventors

San Carlos, CA, United States of America

Victor M Da Costa