Semiconductor Components Industries, LLC

Aptina Imaging Corporation

Omnivision Technologies, Inc.

Aptina Imaging Coporation

Victor Lenchenkov

Sergey Velichko

Dongqing Cao

Hamid Soleimani

Terry L Gilton

Brian W Keelan

Xianmin Yi

Ulrich C Boettiger

Irfan Rahim

Gennadiy A Agranov

Andreas Suess

Robert Daniel McGrath

An image sensor has an array of a tiling pattern of cells, each cell having at least one spiral nanowire circular polarizer formed of nanowires less than 80 nanometers in width; and photodiodes to receive incoming light form the circular polarizer. In embodiments, the polarizer is a descending spiral circular polarizer including at least four nanowires each about fifty nanometers wide at successive levels in the polarizer. In other embodiments, the circular polarizer comprises a flat spiral nanowire of width about seventy nanometers width, the flat spiral nanowire interrupted by cuts, disposed over multiple photodiodes to analyze a diffraction pattern from the polarizer.

Method and systems of image sensors with pixels having circular polarizers

A polarization-sensitive infrared sensitive image sensor, including a plurality of pixels in a semiconductor substrate and forming a pixel array, each pixel including: at least one microlens; at least one photodiode; and at least one light absorbing patch above a corresponding photodiode, each light absorbing patch oriented at a predetermined angle with respect to each of the at least one light absorbing patch, the light absorbing patch absorbs a portion of incident light dependent on polarization of the incoming light relative to the predetermined angle of the light absorbing patch.

Near infrared to far infrared polarization sensitive image sensor

An image sensor has diffractive microlenses over pixels with central structures and ring(s) of material having index of refraction different from that of background material. Disposed beneath the diffractive microlenses are photodiodes that permit determining ratios of illumination of peripheral photodiodes to illumination of central photodiodes of the pixels, and, in embodiments, circuitry for determining said ratio. In embodiments, the ratio is used to find illumination wavelengths; and in other embodiments the ratio is used to determine focus of an imaging lens providing illumination. A method determines color by passing light through a diffractive lens disposed above photodiodes of the diffractive pixel and determining color from illumination peripheral and central photodiodes. An autofocus method of determining focus includes passing light through a diffractive lens and determining focus from illumination of peripheral photodiodes and central photodiodes of the pixel. In embodiments, the central structures are disks and rings are round.

Color CMOS image sensor with diffractive microlenses over subpixel photodiode arrays adapted for autofocus

An image sensor configured to resolve intensity and polarization has multiple pixels each having a single microlens adapted to focus light on a central photodiode surrounded by at least a first, a second, a third, and a fourth peripheral photodiodes, where a first polarizer at a first angle is disposed upon the first peripheral photodiode, a third polarizer at a third angle is disposed upon the third peripheral photodiode, a second polarizer at a second angle is disposed upon the second peripheral photodiode, and a fourth polarizer at a fourth angle is disposed upon the fourth peripheral photodiode, the first, second, third, and fourth angles being different. In embodiments, 4 or 8 peripheral photodiodes are provided, and in an embodiment the polarizers are parts of an octagonal polarizer.

Image sensor with sub-pixel photodiode array with multiple mini-wire grid polarizers for polarization imaging

In one form, an optical touch screen system includes a semiconductor body forming a hybrid display and image sensor comprising a plurality of display pixels interspersed with a plurality of image sensor pixels, a spatial light modulator overlying a surface of the hybrid display and image sensor, and a control circuit for driving the plurality of display pixels with a first pattern and measuring a second pattern of the plurality of image sensor pixels, the control circuit analyzing the second pattern to detect a position of an object and selectively detecting a touch location in response to the second pattern.

Optical touch screen system using radiation pattern sensing and method therefor

An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode.

Global shutter image sensors with light guide and light shield structures

In one form, a touch screen includes an optically transmissive medium, first and second light sources, a detection circuit, and a control circuit. The first light source is positioned to emit light across the optically transmissive medium in a first direction, and the second light source is positioned to emit light across the optically transmissive medium in a second direction orthogonal to the first direction. The detection circuit detects standing wave patterns of light emitted by the first and second light sources along the first and second directions. The control circuit is coupled to the detection circuit and measures a first standing wave pattern in an untouched condition, and a second standing wave pattern in a touched condition. The control circuit detects a touch location in response to a difference between the first standing wave pattern and the second standing wave pattern.

An image sensor may include an array of pixels. Pixels in the array may include a photodiode that converts incident light into electrical charge and a charge storage region for storing the electrical charge before it is read out from the pixel. Pixels in the array may include a microlens formed over the photodiode that directs light onto the photodiode. Pixels in the array may include an additional array of microlenses between the microlens and the photodiode. The additional array of microlenses may direct light away from the charge storage region to prevent charge stored at the charge storage region from being affected by light that is not incident upon the photodiode. The image sensor may be a backside illuminated image sensor that operates in a global shutter mode.

Image sensors with in-pixel lens arrays

A front-side illuminated image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode, transistor gate structures, shallow trench isolation structures, and other associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures that are opaque to light may be formed over regions of the substrate to prevent the transistor gate structures, shallow trench isolation structures, and the other associated pixel circuits from being exposed to stray light. Buried light shielding structures formed in this way can help reduce optical pixel crosstalk.

Image sensor pixels with light guides and light shield structures

An image sensor including a semiconductor layer. A light absorber layer couples with the semiconductor layer at a pixel of the image sensor and absorbs incident light to substantially prevent the incident light from entering the semiconductor layer. The light absorber layer heats a depletion region of the semiconductor layer in response to absorbing the incident light, creating electron/hole pairs. The light absorber layer may include one or more narrow bandgap materials.

Image sensor with heating effect and related methods

An image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in the front surface of a semiconductor substrate. Buried light shielding structures may be formed on the back surface of the substrate to prevent pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with absorptive antireflective coating material can help reduce optical pixel crosstalk and enhance signal to noise ratio.

Backside illuminated image sensors having buried light shields with absorptive antireflective coating

Visual and near infrared pixels may have deep photodiodes to ensure sufficient capture of light. The pixels may have a silicon layer that is etched to form a microlens for the pixel. The pixels may include an inversion layer formed over the silicon layer to prevent dark current. Additionally, the pixels may include a conductive layer formed over the inversion layer that further prevents dark current. The conductive layer may be coupled to a bias voltage supply line. The conductive layer may be biased during image acquisition to prevent dark current. During readout, the bias voltage may be pulsed at a lower voltage to ensure all of the collected charge is transferred out of the photodiode during charge transfer.

Pixels for high performance image sensor

A backside illumination image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode, a storage diode, and associated circuitry formed in a front side of a semiconductor substrate. In accordance with an embodiment, a trench isolation structure may be formed directly over the storage diode but not over the photodiode from a back side of the substrate. The backside trench isolation structure may be filled with absorptive material and can optionally be biased to a ground or negative voltage level. A light shielding layer may also be formed over the backside trench isolation structure on the back side of the substrate. The light shielding layer may be formed from absorptive material or reflective material, and may also be biased to a ground or negative voltage level.

Image sensors with backside trench structures

An image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode, a storage diode, and associated circuitry formed in a semiconductor substrate. Buried light shields may be formed on the substrate to prevent regions between two adjacent photodiodes from being exposed to incoming light. In one embodiment, a shallow trench isolation (STI) structure may be formed between the photodiode and the storage diode, and a conductive layer formed from optically absorptive material may be constructed at the bottom of the STI structure. A via may be formed through the STI structure to help bias the conductive layer using a ground or negative voltage. In another embodiment, an isolation ring structure may be formed at the base of the buried light shields. The isolation ring structure may be formed from optically absorptive material and can optionally be biased using a ground or negative voltage.

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Sunnyvale, CA, United States of America

Victor Lenchenkov