Azur Space Solar Power Gmbh

Victor Khorenko

Daniel Fuhrmann

Wolfgang Guter

Roland Schilling

Ivica Zrinscak

A scalable voltage source having a number N of mutually series-connected partial voltage sources designed as semiconductor diodes, wherein each of the partial voltage sources comprises a p-n junction of a semiconductor diode, and each semiconductor diode has a p-doped absorption layer, wherein the p-absorption layer is passivated by a p-doped passivation layer with a wider band gap than the band gap of the p-absorption layer and the semiconductor diode has an n-absorption layer, wherein the n-absorption layer is passivated by an n-doped passivation layer with a wider band gap than the band gap of the n-absorption layer, and the partial source voltages of the individual partial voltage sources deviate by less than 20%, and between in each case two successive partial voltage sources, a tunnel diode is arranged.

Scalable voltage source

A solar cell receiver is provided that includes a semiconductor element that has a front face, a solar cell provided on the front face, a rear face, multiple lateral surfaces and two electric connectors; a carrier for receiving the semiconductor element, the rear face of the element being fixed to the carrier; and an optical element for concentrating the light onto the rear face of the semiconductor element. The optical element has an underside which partially faces the upper side of the semiconductor element, the underside of the optical element has a first shaped section with a first surface that lies on the front face of the semiconductor element and a second surface that lies on the carrier. The shaped section is designed as a cavity or groove.

Solar cell receiver

An optocoupler having a transmitter module and a receiver module that are galvanically isolated from each other and optically coupled with one another and are integrated in a common housing. The receiver module has a voltage source that has a number N of partial voltage sources mutually connected in series and constructed as semiconductor diodes. Each of the partial voltage sources has a semiconductor diode having a p-n junction, and the partial source voltages of the individual partial voltage sources each deviate by less than 20% from one another. Between each two successive partial voltage sources, a tunnel diode is formed and the partial voltage sources and the tunnel diodes are monolithically integrated together and jointly form a first stack having a top surface and a bottom surface, and the number N of the partial voltage sources is greater than or equal to three.

Optocoupler having a semiconductor diode for each voltage source and a tunnel diode formed between each two successive voltage sources

A solar cell unit having a semiconductor body formed as a solar cell, whereby the semiconductor body has a front side with a first electrical connection and a back side with a second electrical connection and a side surface formed between the front side and the back side, and having a substrate with a top side and a bottom side, whereby the substrate on the top side has a first conductive trace region, configured as part of the substrate, and the first electrical connection is electrically connected to the first conductive trace region, and the substrate on the top side has a second conductive trace region, configured as part of the substrate, and the second electrical connection is electrically connected to the second conductive trace region, and having a secondary optical element, which has a bottom side and guides light to the front side of the semiconductor body.

Solar cell unit

A scalable voltage source having a number N of partial voltage sources implemented as semiconductor diodes connected to one another in series, wherein each of the partial voltage sources has a semiconductor diode with a p-n junction. A tunnel diode is formed between sequential pairs of partial voltage sources, wherein the tunnel diode has multiple semiconductor layers with a larger band gap than the band gap of the p/n absorption layers and the semiconductor layers with the larger band gap are each made of a material with modified stoichiometry and/or a different elemental composition than the p/n absorption layers of the semiconductor diode. The partial voltage sources and the tunnel diodes are monolithically integrated together, and jointly form a first stack with a top and a bottom, and the number N of partial voltage sources is greater than or equal to two.

Growing community of inventors

Neuenstadt a.K., Germany

Victor Khorenko