Bell Telephone Laboratories

Victor Emerald Hauser, Jr

Ashok K Sinha

Hyman J Levinstein

Cyril J Mogab

Richard S Wagner

Cesar D Capio

Frank B Alexander, Jr

A low-temperature, high-pressure, medium-power process, which utilizes a radio frequency powered radial flow reactor, utilizes only silane and ammonia as the reactant gases for deposition. The methods disclosed result in the deposition on semiconductor wafers of moderately high density silicon-nitrogen films which have low tensile stress and good crack resistance. In addition, these films provide good step coverage, good scratch resistance, and an inert barrier to sodium and moisture.

Method of coating semiconductor substrates

An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.

Radial flow reactor including glow discharge limiting shield

Growing community of inventors

Palmerton, PA, United States of America

Victor Emerald Hauser, Jr