Taiwan Semiconductor Manufacturing Comp. Ltd.

United Microelectronics Corp.

Victor Chiang Liang

Chi-Feng Huang

Chia-Chung Chen

Fu-Huan Tsai

Chwen-Ming Liu

Chen-Hua Lin

Yang-Che Chen

Huang-Wen Tseng

Chung-Hao Chu

Han-Min Tsai

Hsiao-Chun Lee

Meng-Chang Ho

Tzu-Jin Yeh

Hsieh-Hung Hsieh

Hong-Lin Chu

Chih-Yu Tseng

Shu Fang Fu

Yu-Lin Wei

Ching-Yu Yang

Fang-Ting Kuo

Chun-Pei Wu

Mingo Liu

Kai-Ling Chiu

Chin-Nan Chang

Wei-Yu Chou

You-Ren Liu

Ankush Chaudhary

Ching-Hung Kao

Yi-Chuan Teng

Chu Fu Chen

Chin-Lung Chen

Cheng-Wen Fan

Chu-Fu Chen

Tz-Hau Guo

Shu-Fang Fu

Chi-Hui Lai

Hong-Seng Shue

Kun-Szu Tseng

Chia-Cheng Pao

Chih-Chen Hsueh

Shuo-Chun Chou

Shou-Chun Chou

Hui-Sheng Chang

Chia-Te Chien

Cho-Ying Lu

Hsing-I Tsai

Feng Yuan

Hua-Chou Tseng

Chun-Yao Ko

Che-Hua Hsu

Jung-Kuo Tu

Tse-Hua Lu

Ching-Kai Shen

Chien-Kuo Yang

Chun Hao Liao

Yu-Ho Chiang

Tsun-Lai Hsu

Chih-Yuh Tzeng

Fredrik Ramberg

In an embodiment, an integrated circuit (IC) device comprises a semiconductor substrate, an isolation region and an active region disposed on the semiconductor substrate, a gate stack disposed over the active region, and a source and a drain disposed in the active region and interposed by the gate stack in a first direction. The active region is at least partially surrounded by the isolation region. A middle portion of the active region laterally extends beyond the gate stack in a second direction that is perpendicular to the first direction.

Circuit structure and method for reducing electronic noises

A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.

Semiconductor structure having asymmetric source/drain regions

A method of testing a semiconductor package includes: forming a charge measurement unit over a carrier substrate; forming a first dielectric layer over the charge measurement unit; forming a first metallization layer over the dielectric layer, wherein the forming of the first metallization layer induces first charges to accumulate on the charge measurement unit; performing a first test against the charge measurement unit to determine whether breakdown occurs in the charge measurement unit; and in response to determining that no breakdown occurs in the charge measurement unit, forming a second dielectric layer over the first metallization layer.

Method of testing semiconductor package

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

High-implant channel semiconductor device and method for manufacturing the same

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

Semiconductor device with enhanced thermal dissipation and method for making the same

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

Semiconductor package and method for making the same

A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.

Dual micro-electro mechanical system and manufacturing method thereof

A semiconductor device includes a plurality of gate electrodes over a substrate, and a source/drain epitaxial layer. The source/drain epitaxial layer is disposed in the substrate and between two adjacent gate electrodes, wherein a bottom surface of the source/drain epitaxial layer is buried in the substrate to a depth less than or equal to two-thirds of a spacing between the two adjacent gate electrodes.

Semiconductor device with source/drain epitaxial layer

A method of fabricating a semiconductor device includes forming a gate structure, a first edge structure and a second edge structure on a semiconductor strip. The method further includes forming a first source/drain feature between the gate structure and the first edge structure. The method further includes forming a second source/drain feature between the gate structure and the second edge structure, wherein a distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature. The method further includes implanting a buried channel in the semiconductor strip, wherein the buried channel is entirely below a top-most surface of the semiconductor strip, a maximum depth of the buried channel is less than a maximum depth of the first source/drain feature, and a dopant concentration of the buried channel is highest under the gate structure.

Method of making a semiconductor device

Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.

Semiconductor device

A transistor includes a gate structure over a substrate, wherein the substrate includes a channel region. The transistor further includes a source/drain (S/D) in the substrate adjacent to the gate structure. The transistor further includes a lightly doped drain (LDD) region adjacent to the S/D, wherein a dopant concentration in the first LDD is less than a dopant concentration in the S/D. The transistor further includes a doping extension region adjacent the LDD region, wherein the doping extension region extends farther under the gate structure than the LDD region, and a maximum depth of the doping extension region is 10-times to 30-times greater than a maximum depth of the LDD.

Transistor having asymmetric threshold voltage and buck converter

An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device. The lower magnetic layer and the upper magnetic layer form a continuous magnetic layer around the insulating layer and the conductors of the inductive device. Magnetic leakage paths are provided by forming openings through the upper magnetic layer. The openings may be formed through the upper magnetic layer by semiconductor processes that have relatively higher precision and accuracy compared to semiconductor processes for forming the insulating layer such as spin coating. This reduces magnetic leakage path variation within the inductive device and from inductive device to inductive device.

Inductive device

A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantation cycles in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.

Semiconductor structure and method of manufacturing the same

A method for detecting defects in a semiconductor device including singulating a die having a substrate including a circuit region and an outer border, a plurality of detecting devices disposed over the substrate and located between the circuit region and the outer border, a first probe pad and a second probe pad electrically connected to two ends of each detecting device, and a seal ring located between the outer border of the die and the detecting devices. The method further includes probing the first probe pad and the second probe pad to determine a connection status of the detecting device, and recognizing a defect when the connection status of the detecting device indicates an open circuit.

Method for detecting defects in semiconductor device

A semiconductor structure includes a gate structure, a source region, a drain region, and an isolation structure. The gate structure includes a first portion, a second portion and a third portion. The first portion extends in a first direction, and the second portion and the third portion extend in a second direction. The second portion and the third portion are disposed at opposite ends of the first portion. The source region and the drain region are separated by the gate structure. The isolation structure surrounds the gate structure, the source region and the drain region. The first portion has a first sidewall, the second portion has a second sidewall, and the third portion has a third sidewall. The first sidewall, the second sidewall and the third sidewall are parallel to the first direction and aligned with each other to form a straight line.

Semiconductor structure

Growing community of inventors

Hsinchu, Taiwan

Victor Chiang Liang