Gte Laboratories Incorporated

Laboratories Incorporated

Victor Cataldo

Marvin J Tabasky

Craig A Armiento

Jagannath Chirravuri

Thomas W Fitzgerald

Paul O Haugsjaa

Margaret B Stern

Harry F Lockwood

Paul O Haugasjaa

A waferboard assembly incorporates mechanical registration features into a substrate platform to facilitate the passive alignment of lasers integrated on a chip to fibers in integral contact with the substrate. The waferboard includes two front pedestal structures and one side pedestal structure, and two vertical post structures within a mounting region defined by the pedestal struutures. The laser chip is mounted on the vertical post structures, and placed in concurrent abutting contact with the pedestal structures. The waferboard is fabricated by etching the substrate to form the front and side pedestal structures, and etching the substrate to define the grooves. In order to form the post structures, a polyimide material is deposited on the substrate using an appropriate mask.

Waferboard structure

A waferboard assembly incorporates mechanical registration features into a substrate platform to facilitate the passive alignment of lasers integrated on a chip to fibers in integral contact with the substrate. The waferboard includes two front pedestal structures and one side pedestal structure, and two vertical post structures within a mounting region defined by the pedestal structures. The laser chip is mounted on the vertical post structures, and placed in concurrent abutting contact with the pedestal structures. The waferboard is fabricated by etching the substrate to form the front and side pedestal structures, and etching the substrate to define the grooves. In order to form the post structures, a polyimide material is deposited on the substrate using an appropriate mask.

Method of fabricating waferboard structure

Waferboard structure and method of fabricating

Method of forming conductive members on a substrate of GaAs. Silicon is placed on the substrate surface in the desired pattern of the conductive members. The substrate is exposed to a gaseous atmosphere containing WF.sub.6. WF.sub.6 is reduced by the silicon causing tungsten to selectively deposit on the silicon but not on the exposed GaAs. The substrate is given a rapid thermal annealing treatment which causes the silicon-tungsten elements to form conductive members having a silicon rich layer at the bottom, an intermediate tungsten silicide layer, and a tungsten rich layer at the top. The conductive members form ohmic contacts with underlying heavily doped GaAs and rectifying Schottky barrier contacts with underlying lightly doped GaAs.

Method of selectively producing conductive members on a semiconductor

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Wilmington, MA, United States of America

Victor Cataldo